Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tende...

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Main Authors: Seungyang Heo, Chadol Oh, Junwoo Son, Hyun Myung Jang
Format: Article
Language:English
Published: Nature Portfolio 2017-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-04884-2
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author Seungyang Heo
Chadol Oh
Junwoo Son
Hyun Myung Jang
author_facet Seungyang Heo
Chadol Oh
Junwoo Son
Hyun Myung Jang
author_sort Seungyang Heo
collection DOAJ
description Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3−δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.
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spelling doaj.art-7054610b50d846d5842cf680e20b02782022-12-21T20:36:08ZengNature PortfolioScientific Reports2045-23222017-07-01711910.1038/s41598-017-04884-2Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin filmsSeungyang Heo0Chadol Oh1Junwoo Son2Hyun Myung Jang3Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH)Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH)Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH)Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH)Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3−δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.https://doi.org/10.1038/s41598-017-04884-2
spellingShingle Seungyang Heo
Chadol Oh
Junwoo Son
Hyun Myung Jang
Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
Scientific Reports
title Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_full Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_fullStr Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_full_unstemmed Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_short Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_sort influence of tensile strain induced oxygen deficiency on metal insulator transitions in ndnio3 δ epitaxial thin films
url https://doi.org/10.1038/s41598-017-04884-2
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