A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process
This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shal...
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MDPI AG
2017-12-01
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Online Access: | https://www.mdpi.com/2076-3417/7/12/1289 |
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author | Jian-Zhi Tseng Po-Jen Shih Cheng-Chih Hsu Ching-Liang Dai |
author_facet | Jian-Zhi Tseng Po-Jen Shih Cheng-Chih Hsu Ching-Liang Dai |
author_sort | Jian-Zhi Tseng |
collection | DOAJ |
description | This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis. |
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format | Article |
id | doaj.art-70591ba307b14be98ddfa070252c3e67 |
institution | Directory Open Access Journal |
issn | 2076-3417 |
language | English |
last_indexed | 2024-12-10T08:39:33Z |
publishDate | 2017-12-01 |
publisher | MDPI AG |
record_format | Article |
series | Applied Sciences |
spelling | doaj.art-70591ba307b14be98ddfa070252c3e672022-12-22T01:55:53ZengMDPI AGApplied Sciences2076-34172017-12-01712128910.3390/app7121289app7121289A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS ProcessJian-Zhi Tseng0Po-Jen Shih1Cheng-Chih Hsu2Ching-Liang Dai3Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Civil and Environmental Engineering, National University of Kaohsiung, Kaohsiung 811, TaiwanDepartment of Electro-Optical Engineering, Yuan Ze University, Taoyuan 320, TaiwanDepartment of Mechanical Engineering, National Chung Hsing University, Taichung 402, TaiwanThis study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis.https://www.mdpi.com/2076-3417/7/12/1289magnetic field sensormagnetotransistorCMOS processMEMS |
spellingShingle | Jian-Zhi Tseng Po-Jen Shih Cheng-Chih Hsu Ching-Liang Dai A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process Applied Sciences magnetic field sensor magnetotransistor CMOS process MEMS |
title | A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process |
title_full | A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process |
title_fullStr | A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process |
title_full_unstemmed | A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process |
title_short | A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process |
title_sort | three axis magnetic field microsensor fabricated utilizing a cmos process |
topic | magnetic field sensor magnetotransistor CMOS process MEMS |
url | https://www.mdpi.com/2076-3417/7/12/1289 |
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