Photoconductive Detector Based on CdTe Nanorods

CdTenanorods have been prepared with the different reaction time period from 1hour to 3 hours. CdTenanorods visible photoconductive detector films have been prepared on porous silicon layer with etching time 10 min. The CdTenanorods crystallization has been studied, the crystalline structure appears...

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Main Authors: Fatima Amer, Rawa K.Ibrahim, Asama N.Naje, Sudad S.Ahmed
Format: Article
Language:English
Published: Unviversity of Technology- Iraq 2015-07-01
Series:Engineering and Technology Journal
Subjects:
Online Access:https://etj.uotechnology.edu.iq/article_116375_80cc3e570ff0649c1b90fee4acd69470.pdf
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author Fatima Amer
Rawa K.Ibrahim
Asama N.Naje
Sudad S.Ahmed
author_facet Fatima Amer
Rawa K.Ibrahim
Asama N.Naje
Sudad S.Ahmed
author_sort Fatima Amer
collection DOAJ
description CdTenanorods have been prepared with the different reaction time period from 1hour to 3 hours. CdTenanorods visible photoconductive detector films have been prepared on porous silicon layer with etching time 10 min. The CdTenanorods crystallization has been studied, the crystalline structure appears hexagonal when the samples dried under vacuum at 400C° for 1h. The Hall measurements show that all samples were p – type semiconductor. The response time of the fabricated CdTe detector with different reaction time was measured by illuminating the samples visible light (Halogen lamp) and its values were decreased from 0.411ms for 1hour to 0.364ms for 3 hours, the photoresponsivity of the detector for reaction time 3hours was to be 3.25×10-6A/W and specific detectivity is found to be 1.05×106W-1Hz1/2cm.
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spelling doaj.art-705a8e32d7d74752a719aa0869099ffa2024-02-04T17:28:29ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582015-07-01336B1048105810.30684/etj.2015.116375116375Photoconductive Detector Based on CdTe NanorodsFatima AmerRawa K.IbrahimAsama N.NajeSudad S.AhmedCdTenanorods have been prepared with the different reaction time period from 1hour to 3 hours. CdTenanorods visible photoconductive detector films have been prepared on porous silicon layer with etching time 10 min. The CdTenanorods crystallization has been studied, the crystalline structure appears hexagonal when the samples dried under vacuum at 400C° for 1h. The Hall measurements show that all samples were p – type semiconductor. The response time of the fabricated CdTe detector with different reaction time was measured by illuminating the samples visible light (Halogen lamp) and its values were decreased from 0.411ms for 1hour to 0.364ms for 3 hours, the photoresponsivity of the detector for reaction time 3hours was to be 3.25×10-6A/W and specific detectivity is found to be 1.05×106W-1Hz1/2cm.https://etj.uotechnology.edu.iq/article_116375_80cc3e570ff0649c1b90fee4acd69470.pdfcdtenanorodsphotodetectorsensitivitydetectivity
spellingShingle Fatima Amer
Rawa K.Ibrahim
Asama N.Naje
Sudad S.Ahmed
Photoconductive Detector Based on CdTe Nanorods
Engineering and Technology Journal
cdtenanorods
photodetector
sensitivity
detectivity
title Photoconductive Detector Based on CdTe Nanorods
title_full Photoconductive Detector Based on CdTe Nanorods
title_fullStr Photoconductive Detector Based on CdTe Nanorods
title_full_unstemmed Photoconductive Detector Based on CdTe Nanorods
title_short Photoconductive Detector Based on CdTe Nanorods
title_sort photoconductive detector based on cdte nanorods
topic cdtenanorods
photodetector
sensitivity
detectivity
url https://etj.uotechnology.edu.iq/article_116375_80cc3e570ff0649c1b90fee4acd69470.pdf
work_keys_str_mv AT fatimaamer photoconductivedetectorbasedoncdtenanorods
AT rawakibrahim photoconductivedetectorbasedoncdtenanorods
AT asamannaje photoconductivedetectorbasedoncdtenanorods
AT sudadsahmed photoconductivedetectorbasedoncdtenanorods