On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films
In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels...
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MDPI AG
2022-08-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/17/5862 |
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| author | Abil S. Asvarov Aslan K. Abduev Akhmed K. Akhmedov Vladimir M. Kanevsky |
| author_facet | Abil S. Asvarov Aslan K. Abduev Akhmed K. Akhmedov Vladimir M. Kanevsky |
| author_sort | Abil S. Asvarov |
| collection | DOAJ |
| description | In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries. |
| first_indexed | 2024-03-10T01:36:28Z |
| format | Article |
| id | doaj.art-7073334e9cdf46be9e8382d123034d04 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T01:36:28Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-7073334e9cdf46be9e8382d123034d042023-11-23T13:31:33ZengMDPI AGMaterials1996-19442022-08-011517586210.3390/ma15175862On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin FilmsAbil S. Asvarov0Aslan K. Abduev1Akhmed K. Akhmedov2Vladimir M. Kanevsky3Institute of Physics, Dagestan Research Center of Russian Academy Sciences, Yaragskogo Str., 94, 367015 Makhachkala, RussiaBasic Department of Nanotechnology and Microsystem Technology, Academy of Engineering, RUDN University, 117198 Moscow, RussiaInstitute of Physics, Dagestan Research Center of Russian Academy Sciences, Yaragskogo Str., 94, 367015 Makhachkala, RussiaShubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics” of Russian Academy of Sciences, Leninsky Prospect, 59, 119333 Moscow, RussiaIn this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.https://www.mdpi.com/1996-1944/15/17/5862ZnOTCOthin filmmagnetron sputteringceramic targetdoping |
| spellingShingle | Abil S. Asvarov Aslan K. Abduev Akhmed K. Akhmedov Vladimir M. Kanevsky On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films Materials ZnO TCO thin film magnetron sputtering ceramic target doping |
| title | On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films |
| title_full | On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films |
| title_fullStr | On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films |
| title_full_unstemmed | On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films |
| title_short | On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films |
| title_sort | on the effect of the co introduction of al and ga impurities on the electrical performance of transparent conductive zno based thin films |
| topic | ZnO TCO thin film magnetron sputtering ceramic target doping |
| url | https://www.mdpi.com/1996-1944/15/17/5862 |
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