Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry
Understanding the surface recombination property of semiconductor materials is beneficial for improving the performance of optoelectronic devices. In this paper, differential photocarrier radiometry (PCR) is carried out to investigate the evolution of the surface recombination velocities of silicon...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0157087 |
| _version_ | 1797755881882910720 |
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| author | Jing Chen Qian Wang Ailing Tian Lingling Wu |
| author_facet | Jing Chen Qian Wang Ailing Tian Lingling Wu |
| author_sort | Jing Chen |
| collection | DOAJ |
| description | Understanding the surface recombination property of semiconductor materials is beneficial for improving the performance of optoelectronic devices. In this paper, differential photocarrier radiometry (PCR) is carried out to investigate the evolution of the surface recombination velocities of silicon wafers induced by laser irradiation. The PCR signal and the surface recombination velocities were found to be strongly dependent on the quality of the wafer surface and the duration of laser irradiation. The native oxide surface was more susceptible to laser irradiation than the Al2O3 passivated surface due to more surface defects being annealed. A surface-defect annealing model was used to explain the transient behavior of the PCR signal and the surface recombination velocity. |
| first_indexed | 2024-03-12T17:53:32Z |
| format | Article |
| id | doaj.art-707437139a674f06a07e5bb13af6a15d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T17:53:32Z |
| publishDate | 2023-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-707437139a674f06a07e5bb13af6a15d2023-08-02T20:06:09ZengAIP Publishing LLCAIP Advances2158-32262023-07-01137075102075102-610.1063/5.0157087Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometryJing Chen0Qian Wang1Ailing Tian2Lingling Wu3School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaUnderstanding the surface recombination property of semiconductor materials is beneficial for improving the performance of optoelectronic devices. In this paper, differential photocarrier radiometry (PCR) is carried out to investigate the evolution of the surface recombination velocities of silicon wafers induced by laser irradiation. The PCR signal and the surface recombination velocities were found to be strongly dependent on the quality of the wafer surface and the duration of laser irradiation. The native oxide surface was more susceptible to laser irradiation than the Al2O3 passivated surface due to more surface defects being annealed. A surface-defect annealing model was used to explain the transient behavior of the PCR signal and the surface recombination velocity.http://dx.doi.org/10.1063/5.0157087 |
| spellingShingle | Jing Chen Qian Wang Ailing Tian Lingling Wu Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry AIP Advances |
| title | Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry |
| title_full | Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry |
| title_fullStr | Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry |
| title_full_unstemmed | Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry |
| title_short | Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry |
| title_sort | evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry |
| url | http://dx.doi.org/10.1063/5.0157087 |
| work_keys_str_mv | AT jingchen evolutionofsurfacerecombinationpropertyofsiliconwafersduringlaserirradiationbydifferentialphotocarrierradiometry AT qianwang evolutionofsurfacerecombinationpropertyofsiliconwafersduringlaserirradiationbydifferentialphotocarrierradiometry AT ailingtian evolutionofsurfacerecombinationpropertyofsiliconwafersduringlaserirradiationbydifferentialphotocarrierradiometry AT linglingwu evolutionofsurfacerecombinationpropertyofsiliconwafersduringlaserirradiationbydifferentialphotocarrierradiometry |