Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry
Understanding the surface recombination property of semiconductor materials is beneficial for improving the performance of optoelectronic devices. In this paper, differential photocarrier radiometry (PCR) is carried out to investigate the evolution of the surface recombination velocities of silicon...
Main Authors: | Jing Chen, Qian Wang, Ailing Tian, Lingling Wu |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-07-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0157087 |
Similar Items
-
Nonlinear two-layer model for photocarrier radiometry of ion-implanted silicon wafers
by: Xiaoke Lei, et al.
Published: (2019-03-01) -
Measuring the properties of colloidal PbS quantum dot thin films using differential photocarrier radiometry technology
by: Zitao Zhao, et al.
Published: (2024-10-01) -
Optical Absorption, Photocarrier Recombination Dynamics and Terahertz Dielectric Properties of Electron-Irradiated GaSe Crystals
by: Svetlana A. Bereznaya, et al.
Published: (2023-11-01) -
Experimental laser-machining of silicon wafer
by: Lau, Zhen Chyen
Published: (2010) -
NON-CONTACTING DETERMINATION OF CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY USING PHOTOTHERMAL RADIOMETRY
by: Sheard, S, et al.
Published: (1990)