Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also displa...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-10-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/21/2564 |
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| author | Young Pyo Jeon Yongbin Bang Hak Ji Lee Eun Jung Lee Young Joon Yoo Sang Yoon Park |
| author_facet | Young Pyo Jeon Yongbin Bang Hak Ji Lee Eun Jung Lee Young Joon Yoo Sang Yoon Park |
| author_sort | Young Pyo Jeon |
| collection | DOAJ |
| description | Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption. |
| first_indexed | 2024-03-10T06:04:37Z |
| format | Article |
| id | doaj.art-708352a3c1664026be4cb20b398bbc3d |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T06:04:37Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-708352a3c1664026be4cb20b398bbc3d2023-11-22T20:37:33ZengMDPI AGElectronics2079-92922021-10-011021256410.3390/electronics10212564Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted LithiumYoung Pyo Jeon0Yongbin Bang1Hak Ji Lee2Eun Jung Lee3Young Joon Yoo4Sang Yoon Park5Center for Applied Electromagnetic Research for Advanced Institute of Convergence Technology, Seoul National University, Gyeonggi-do, Suwon 16229, KoreaCenter for Applied Electromagnetic Research for Advanced Institute of Convergence Technology, Seoul National University, Gyeonggi-do, Suwon 16229, KoreaCenter for Applied Electromagnetic Research for Advanced Institute of Convergence Technology, Seoul National University, Gyeonggi-do, Suwon 16229, KoreaCenter for Applied Electromagnetic Research for Advanced Institute of Convergence Technology, Seoul National University, Gyeonggi-do, Suwon 16229, KoreaCenter for Applied Electromagnetic Research for Advanced Institute of Convergence Technology, Seoul National University, Gyeonggi-do, Suwon 16229, KoreaCenter for Applied Electromagnetic Research for Advanced Institute of Convergence Technology, Seoul National University, Gyeonggi-do, Suwon 16229, KoreaRecent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.https://www.mdpi.com/2079-9292/10/21/2564memristive deviceshort-term memorylong-term memorylithiumplasticity |
| spellingShingle | Young Pyo Jeon Yongbin Bang Hak Ji Lee Eun Jung Lee Young Joon Yoo Sang Yoon Park Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium Electronics memristive device short-term memory long-term memory lithium plasticity |
| title | Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium |
| title_full | Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium |
| title_fullStr | Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium |
| title_full_unstemmed | Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium |
| title_short | Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium |
| title_sort | short term to long term plasticity transition behavior of memristive devices with low power consumption via facilitating ionic drift of implanted lithium |
| topic | memristive device short-term memory long-term memory lithium plasticity |
| url | https://www.mdpi.com/2079-9292/10/21/2564 |
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