| Summary: | CaZrO<sub>3</sub> (CZO) thin films were deposited on Pt/Ti/SiO<sub>2</sub>/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O<sub>2</sub> partial pressure in the flow ratio of O<sub>2</sub>/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O<sub>2</sub>/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO<sub>3</sub> with a small amount of Ca<sub>0</sub>.<sub>2</sub>Zr<sub>0</sub>.<sub>8</sub>O<sub>1</sub>.<sub>8</sub>. The main crystal phase was Ca<sub>0</sub>.<sub>2</sub>Zr<sub>0</sub>.<sub>8</sub>O<sub>1</sub>.<sub>8</sub> when the film was deposited under an O<sub>2</sub>/Ar ratio of 40:10. The annealed film with a 40:40 O<sub>2</sub>/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10<sup>−7</sup> A/cm<sup>2</sup> at 30 V with an ohmic conduction mechanism.
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