Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering
CaZrO<sub>3</sub> (CZO) thin films were deposited on Pt/Ti/SiO<sub>2</sub>/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that th...
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MDPI AG
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| Online Access: | https://www.mdpi.com/1996-1944/17/5/1120 |
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| author | Mingjian Ding Bing Xie Ming Lv Zhenya Lu |
| author_facet | Mingjian Ding Bing Xie Ming Lv Zhenya Lu |
| author_sort | Mingjian Ding |
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| description | CaZrO<sub>3</sub> (CZO) thin films were deposited on Pt/Ti/SiO<sub>2</sub>/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O<sub>2</sub> partial pressure in the flow ratio of O<sub>2</sub>/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O<sub>2</sub>/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO<sub>3</sub> with a small amount of Ca<sub>0</sub>.<sub>2</sub>Zr<sub>0</sub>.<sub>8</sub>O<sub>1</sub>.<sub>8</sub>. The main crystal phase was Ca<sub>0</sub>.<sub>2</sub>Zr<sub>0</sub>.<sub>8</sub>O<sub>1</sub>.<sub>8</sub> when the film was deposited under an O<sub>2</sub>/Ar ratio of 40:10. The annealed film with a 40:40 O<sub>2</sub>/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10<sup>−7</sup> A/cm<sup>2</sup> at 30 V with an ohmic conduction mechanism. |
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| spelling | doaj.art-7085f0208df742c2a04d5f59e024b76b2024-03-12T16:49:19ZengMDPI AGMaterials1996-19442024-02-01175112010.3390/ma17051120Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron SputteringMingjian Ding0Bing Xie1Ming Lv2Zhenya Lu3School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, ChinaCollege of Material Science and Engineering, Sichuan University, Chengdu 610064, ChinaSchool of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, ChinaSchool of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, ChinaCaZrO<sub>3</sub> (CZO) thin films were deposited on Pt/Ti/SiO<sub>2</sub>/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O<sub>2</sub> partial pressure in the flow ratio of O<sub>2</sub>/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O<sub>2</sub>/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO<sub>3</sub> with a small amount of Ca<sub>0</sub>.<sub>2</sub>Zr<sub>0</sub>.<sub>8</sub>O<sub>1</sub>.<sub>8</sub>. The main crystal phase was Ca<sub>0</sub>.<sub>2</sub>Zr<sub>0</sub>.<sub>8</sub>O<sub>1</sub>.<sub>8</sub> when the film was deposited under an O<sub>2</sub>/Ar ratio of 40:10. The annealed film with a 40:40 O<sub>2</sub>/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10<sup>−7</sup> A/cm<sup>2</sup> at 30 V with an ohmic conduction mechanism.https://www.mdpi.com/1996-1944/17/5/1120CaZrO<sub>3</sub> thin filmsRF magnetron sputteringannealingdielectric propertiesO<sub>2</sub>/Ar flow ratiomicro morphology |
| spellingShingle | Mingjian Ding Bing Xie Ming Lv Zhenya Lu Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering Materials CaZrO<sub>3</sub> thin films RF magnetron sputtering annealing dielectric properties O<sub>2</sub>/Ar flow ratio micro morphology |
| title | Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering |
| title_full | Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering |
| title_fullStr | Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering |
| title_full_unstemmed | Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering |
| title_short | Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering |
| title_sort | effects of o sub 2 sub ar ratio on preparation and dielectric properties of cazro sub 3 sub films by radio frequency rf magnetron sputtering |
| topic | CaZrO<sub>3</sub> thin films RF magnetron sputtering annealing dielectric properties O<sub>2</sub>/Ar flow ratio micro morphology |
| url | https://www.mdpi.com/1996-1944/17/5/1120 |
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