Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering

Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering

CaZrO<sub>3</sub> (CZO) thin films were deposited on Pt/Ti/SiO<sub>2</sub>/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that th...

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Bibliographic Details
Main Authors: Mingjian Ding, Bing Xie, Ming Lv, Zhenya Lu
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Materials
Subjects:
CaZrO<sub>3</sub> thin films
RF magnetron sputtering
annealing
dielectric properties
O<sub>2</sub>/Ar flow ratio
micro morphology
Online Access:https://www.mdpi.com/1996-1944/17/5/1120

Internet

https://www.mdpi.com/1996-1944/17/5/1120

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