Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering

Effects of O<sub>2</sub>/Ar Ratio on Preparation and Dielectric Properties of CaZrO<sub>3</sub> Films by Radio Frequency (RF) Magnetron Sputtering

CaZrO<sub>3</sub> (CZO) thin films were deposited on Pt/Ti/SiO<sub>2</sub>/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that th...

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Bibliographic Details
Main Authors:	Mingjian Ding, Bing Xie, Ming Lv, Zhenya Lu
Format:	Article
Language:	English
Published:	MDPI AG 2024-02-01
Series:	Materials
Subjects:	CaZrO<sub>3</sub> thin films RF magnetron sputtering annealing dielectric properties O<sub>2</sub>/Ar flow ratio micro morphology
Online Access:	https://www.mdpi.com/1996-1944/17/5/1120

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