High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers
The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a maturity level that enables a variety of applications which require compact laser sources capable of watt-range output powers with high beam quality. We review the fundamental design issues and current performance...
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9633205/ |
| _version_ | 1818160248451497984 |
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| author | Luke J. Mawst Dan Botez |
| author_facet | Luke J. Mawst Dan Botez |
| author_sort | Luke J. Mawst |
| collection | DOAJ |
| description | The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a maturity level that enables a variety of applications which require compact laser sources capable of watt-range output powers with high beam quality. We review the fundamental design issues and current performance limitations, focusing on InGaAs/AlInAs/InP QCLs with emission in the 3-6 μm wavelength range. Metamorphic materials broaden the available compositions for accessing short emission wavelengths (λ<inline-formula><tex-math notation="LaTeX">$ \leq $</tex-math></inline-formula>3.5 μm) or for integration with GaAs- and Si-photonics platforms. Conduction-band engineering through the use of varying compositions throughout the active-region structure has been utilized to achieve the highest performance levels to date. Interface roughness scattering plays a dominant role in determining both the lower-laser-level lifetime as well as the carrier-leakage current. Numerous approaches have been implemented in attempts to control, scale, and stabilize the spatial mode to high output powers. Of all approaches photonic-crystal structures with high built-in index contrast, thus capable of maintaining modal properties under strong self-heating, are the most promising device configuration for achieving single-spatial-mode, single-lobe reliable CW operation to multiwatt-range power levels. Such devices have demonstrated to date >5W front-facet output powers with diffraction-limited beams in short-pulse operation. |
| first_indexed | 2024-12-11T15:58:52Z |
| format | Article |
| id | doaj.art-7093e691f53e4067a2599c2f82467584 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-11T15:58:52Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-7093e691f53e4067a2599c2f824675842022-12-22T00:59:21ZengIEEEIEEE Photonics Journal1943-06552022-01-0114112510.1109/JPHOT.2021.31322619633205High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade LasersLuke J. Mawst0https://orcid.org/0000-0001-6843-5332Dan Botez1https://orcid.org/0000-0002-3232-7222Universityof Wisconsin-Madison, Madison, WI, USAUniversityof Wisconsin-Madison, Madison, WI, USAThe performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a maturity level that enables a variety of applications which require compact laser sources capable of watt-range output powers with high beam quality. We review the fundamental design issues and current performance limitations, focusing on InGaAs/AlInAs/InP QCLs with emission in the 3-6 μm wavelength range. Metamorphic materials broaden the available compositions for accessing short emission wavelengths (λ<inline-formula><tex-math notation="LaTeX">$ \leq $</tex-math></inline-formula>3.5 μm) or for integration with GaAs- and Si-photonics platforms. Conduction-band engineering through the use of varying compositions throughout the active-region structure has been utilized to achieve the highest performance levels to date. Interface roughness scattering plays a dominant role in determining both the lower-laser-level lifetime as well as the carrier-leakage current. Numerous approaches have been implemented in attempts to control, scale, and stabilize the spatial mode to high output powers. Of all approaches photonic-crystal structures with high built-in index contrast, thus capable of maintaining modal properties under strong self-heating, are the most promising device configuration for achieving single-spatial-mode, single-lobe reliable CW operation to multiwatt-range power levels. Such devices have demonstrated to date >5W front-facet output powers with diffraction-limited beams in short-pulse operation.https://ieeexplore.ieee.org/document/9633205/Semiconductor lasersquantum cascade lasersmid-infrared lasers |
| spellingShingle | Luke J. Mawst Dan Botez High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers IEEE Photonics Journal Semiconductor lasers quantum cascade lasers mid-infrared lasers |
| title | High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers |
| title_full | High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers |
| title_fullStr | High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers |
| title_full_unstemmed | High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers |
| title_short | High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers |
| title_sort | high power mid infrared x03bb x223c 3 6 x03bc m quantum cascade lasers |
| topic | Semiconductor lasers quantum cascade lasers mid-infrared lasers |
| url | https://ieeexplore.ieee.org/document/9633205/ |
| work_keys_str_mv | AT lukejmawst highpowermidinfraredx03bbx223c36x03bcmquantumcascadelasers AT danbotez highpowermidinfraredx03bbx223c36x03bcmquantumcascadelasers |