Metal-semiconductor phase transition in nanoheteroepitaxial structures technology
Relevance of the work is caused by the necessity of obtain nanogeteroepitaxial structures with quantum dots to design and to develop the production of semiconductor energy high-performance devices. The main aim of the study is to identify the reasons of forming wide-receiving semiconductor material...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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Tomsk Polytechnic University
2019-05-01
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| Series: | Известия Томского политехнического университета: Инжиниринг георесурсов |
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| Online Access: | http://izvestiya-tpu.ru/archive/article/view/1430 |
| _version_ | 1797812448537870336 |
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| author | Igor Maronchuk Igor Maronchuk Tamara Kulyutkina |
| author_facet | Igor Maronchuk Igor Maronchuk Tamara Kulyutkina |
| author_sort | Igor Maronchuk |
| collection | DOAJ |
| description | Relevance of the work is caused by the necessity of obtain nanogeteroepitaxial structures with quantum dots to design and to develop the production of semiconductor energy high-performance devices. The main aim of the study is to identify the reasons of forming wide-receiving semiconductor material of narrow-gap one when growing it in the form of quantum dots; to investigate the possibility of applying metal-semiconductor phase transition to obtain the material which in the form of quantum dots corresponds to narrow-gap semiconductor. The methods used in the study: nanogeteroepitaxial structures with quantum dots were grown by liquid-phase epitaxy with pulse-cooled substrate; properties of the structures obtained were studied by investigation of their photoluminescence spectra taken from the samples using a set of spectral apparatus based on two monochromators MDR-41. The results: The authors have revealed that the change in InAs bandgap in quantum dot is caused by a quantum dot size as compared with InAs bulk material. The dimension of the dots depends on difference between the lattice constants of the matrix material and quantum dot material. Metal-semiconductor interface phase transition is implemented in nanogeteroepitaxial structures with quantum dots of metal (Yb). The bandgap of the semiconductor formed at the time is determined by the growth temperature. Application of metal-semiconductor phase transition allows obtaining in one process multilayer nanogeteroepitaxial structures with the arrays of quantum dots with different values of the bandgap. |
| first_indexed | 2024-03-13T07:38:39Z |
| format | Article |
| id | doaj.art-70978a02c41a4771b00239940bb8b8cf |
| institution | Directory Open Access Journal |
| issn | 2500-1019 2413-1830 |
| language | Russian |
| last_indexed | 2024-03-13T07:38:39Z |
| publishDate | 2019-05-01 |
| publisher | Tomsk Polytechnic University |
| record_format | Article |
| series | Известия Томского политехнического университета: Инжиниринг георесурсов |
| spelling | doaj.art-70978a02c41a4771b00239940bb8b8cf2023-06-03T21:08:09ZrusTomsk Polytechnic UniversityИзвестия Томского политехнического университета: Инжиниринг георесурсов2500-10192413-18302019-05-013252Metal-semiconductor phase transition in nanoheteroepitaxial structures technologyIgor MaronchukIgor MaronchukTamara KulyutkinaRelevance of the work is caused by the necessity of obtain nanogeteroepitaxial structures with quantum dots to design and to develop the production of semiconductor energy high-performance devices. The main aim of the study is to identify the reasons of forming wide-receiving semiconductor material of narrow-gap one when growing it in the form of quantum dots; to investigate the possibility of applying metal-semiconductor phase transition to obtain the material which in the form of quantum dots corresponds to narrow-gap semiconductor. The methods used in the study: nanogeteroepitaxial structures with quantum dots were grown by liquid-phase epitaxy with pulse-cooled substrate; properties of the structures obtained were studied by investigation of their photoluminescence spectra taken from the samples using a set of spectral apparatus based on two monochromators MDR-41. The results: The authors have revealed that the change in InAs bandgap in quantum dot is caused by a quantum dot size as compared with InAs bulk material. The dimension of the dots depends on difference between the lattice constants of the matrix material and quantum dot material. Metal-semiconductor interface phase transition is implemented in nanogeteroepitaxial structures with quantum dots of metal (Yb). The bandgap of the semiconductor formed at the time is determined by the growth temperature. Application of metal-semiconductor phase transition allows obtaining in one process multilayer nanogeteroepitaxial structures with the arrays of quantum dots with different values of the bandgap.http://izvestiya-tpu.ru/archive/article/view/1430phase transitionmetal-semiconductorytterbiumliquid phase epitaxynanoheteroepitaxial structuresquantum dots |
| spellingShingle | Igor Maronchuk Igor Maronchuk Tamara Kulyutkina Metal-semiconductor phase transition in nanoheteroepitaxial structures technology Известия Томского политехнического университета: Инжиниринг георесурсов phase transition metal-semiconductor ytterbium liquid phase epitaxy nanoheteroepitaxial structures quantum dots |
| title | Metal-semiconductor phase transition in nanoheteroepitaxial structures technology |
| title_full | Metal-semiconductor phase transition in nanoheteroepitaxial structures technology |
| title_fullStr | Metal-semiconductor phase transition in nanoheteroepitaxial structures technology |
| title_full_unstemmed | Metal-semiconductor phase transition in nanoheteroepitaxial structures technology |
| title_short | Metal-semiconductor phase transition in nanoheteroepitaxial structures technology |
| title_sort | metal semiconductor phase transition in nanoheteroepitaxial structures technology |
| topic | phase transition metal-semiconductor ytterbium liquid phase epitaxy nanoheteroepitaxial structures quantum dots |
| url | http://izvestiya-tpu.ru/archive/article/view/1430 |
| work_keys_str_mv | AT igormaronchuk metalsemiconductorphasetransitioninnanoheteroepitaxialstructurestechnology AT igormaronchuk metalsemiconductorphasetransitioninnanoheteroepitaxialstructurestechnology AT tamarakulyutkina metalsemiconductorphasetransitioninnanoheteroepitaxialstructurestechnology |