Simulation of a Steep-Slope p- and n-Type HfS<sub>2</sub>/MoTe<sub>2</sub> Field-Effect Transistor with the Hybrid Transport Mechanism
The use of a two-dimensional (2D) van der Waals (vdW) metal-semiconductor (MS) heterojunction as an efficient cold source (CS) has recently been proposed as a promising approach in the development of steep-slope field-effect transistors (FETs). In addition to the selection of source materials with l...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/4/649 |