Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states i...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-05-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847821001532 |
| _version_ | 1797713827457925120 |
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| author | Chen Liu Binjian Zeng Siwei Dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou |
| author_facet | Chen Liu Binjian Zeng Siwei Dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou |
| author_sort | Chen Liu |
| collection | DOAJ |
| description | Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states in the HfO2−based FeFETs. Here we firstly report the write/read disturb effects on the multiple memory states in the Hf0.5Zr0.5O2 (HZO)−based FeFETs. The multiple memory states in HZO−based FeFETs do not show obvious degradation with the write and read disturb cycles. Moreover, the retention characteristics of the intermediate memory states in HZO−based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric polarization. Through the deep analysis of the operation principle of in HZO−based FeFETs, we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization shielding. The experimental and theoretical evidences confirm that the long−term stability of the intermediate memory states in HZO−based FeFETs are as robust as that of the saturated memory state, laying a solid foundation for their practical applications. |
| first_indexed | 2024-03-12T07:42:36Z |
| format | Article |
| id | doaj.art-70d25fafea354da1885421915b6db61d |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-12T07:42:36Z |
| publishDate | 2022-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-70d25fafea354da1885421915b6db61d2023-09-02T21:15:45ZengElsevierJournal of Materiomics2352-84782022-05-0183685692Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistorsChen Liu0Binjian Zeng1Siwei Dai2Shuaizhi Zheng3Qiangxiang Peng4Jinjuan Xiang5Jianfeng Gao6Jie Zhao7Jincheng Zhang8Min Liao9Yichun Zhou10Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, ChinaKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China; College of Civil Engineering and Mechanics, Xiangtan University, Xiangtan, 411105, China; Corresponding author. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, ChinaKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, ChinaKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, ChinaIntegrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, ChinaIntegrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, ChinaIntegrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, ChinaKey Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China; Corresponding author. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, ChinaMultilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states in the HfO2−based FeFETs. Here we firstly report the write/read disturb effects on the multiple memory states in the Hf0.5Zr0.5O2 (HZO)−based FeFETs. The multiple memory states in HZO−based FeFETs do not show obvious degradation with the write and read disturb cycles. Moreover, the retention characteristics of the intermediate memory states in HZO−based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric polarization. Through the deep analysis of the operation principle of in HZO−based FeFETs, we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization shielding. The experimental and theoretical evidences confirm that the long−term stability of the intermediate memory states in HZO−based FeFETs are as robust as that of the saturated memory state, laying a solid foundation for their practical applications.http://www.sciencedirect.com/science/article/pii/S2352847821001532Ferroelectric field−effect transistors (FeFETs)Hf0.5Zr0.5O2 (HZO)Multiple memory statesWrite/read disturbRetention |
| spellingShingle | Chen Liu Binjian Zeng Siwei Dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors Journal of Materiomics Ferroelectric field−effect transistors (FeFETs) Hf0.5Zr0.5O2 (HZO) Multiple memory states Write/read disturb Retention |
| title | Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors |
| title_full | Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors |
| title_fullStr | Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors |
| title_full_unstemmed | Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors |
| title_short | Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors |
| title_sort | robustly stable intermediate memory states in hfo2 based ferroelectric field effect transistors |
| topic | Ferroelectric field−effect transistors (FeFETs) Hf0.5Zr0.5O2 (HZO) Multiple memory states Write/read disturb Retention |
| url | http://www.sciencedirect.com/science/article/pii/S2352847821001532 |
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