A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors
In this paper, design of a voltage reference circuit using only MOS transistors and without employing an operational amplifier is presented. A proportional to absolute temperature [PTAT] voltage and a PTAT current are designed then difference of the PTAT voltage and product of the PTAT curr...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Faculty of Technical Sciences in Cacak
2020-01-01
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| Series: | Serbian Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-4869/2020/1451-48692001031P.pdf |
| _version_ | 1818158236772073472 |
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| author | Prasad Guru Shama Kumara |
| author_facet | Prasad Guru Shama Kumara |
| author_sort | Prasad Guru |
| collection | DOAJ |
| description | In this paper, design of a voltage reference circuit using only MOS
transistors and without employing an operational amplifier is presented. A
proportional to absolute temperature [PTAT] voltage and a PTAT current are
designed then difference of the PTAT voltage and product of the PTAT current
and resistor gives the temperature independent voltage. The advantages of
both sub-threshold and strong inversion region operation of MOS transistors
are exploited in the design. The voltage reference is implemented using
standard CMOS 180 nm technology. The voltage reference provides a voltage of
224.3 mV consuming a quiescent current of 30 μA at room temperature. Post
layout simulation results show that the proposed voltage reference has a
temperature coefficient of 167.18 ppm/°C and varies only 3mV when there is a
±10% variation in supply voltage. The circuit occupies an area of only
93.6×32.6μm on the chip, making it suitable for area constraint
applications. |
| first_indexed | 2024-12-11T15:26:53Z |
| format | Article |
| id | doaj.art-70d9f15d88794fe5903ae49954beef22 |
| institution | Directory Open Access Journal |
| issn | 1451-4869 2217-7183 |
| language | English |
| last_indexed | 2024-12-11T15:26:53Z |
| publishDate | 2020-01-01 |
| publisher | Faculty of Technical Sciences in Cacak |
| record_format | Article |
| series | Serbian Journal of Electrical Engineering |
| spelling | doaj.art-70d9f15d88794fe5903ae49954beef222022-12-22T01:00:11ZengFaculty of Technical Sciences in CacakSerbian Journal of Electrical Engineering1451-48692217-71832020-01-01171314010.2298/SJEE2001031P1451-48692001031PA 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistorsPrasad Guru0Shama Kumara1Faculty of Electronics and Communication Department, Manipal Institute of Technology, MAHE Deemed to be University Manipal, IndiaFaculty of Electronics and Communication Department, Manipal Institute of Technology, MAHE Deemed to be University Manipal, IndiaIn this paper, design of a voltage reference circuit using only MOS transistors and without employing an operational amplifier is presented. A proportional to absolute temperature [PTAT] voltage and a PTAT current are designed then difference of the PTAT voltage and product of the PTAT current and resistor gives the temperature independent voltage. The advantages of both sub-threshold and strong inversion region operation of MOS transistors are exploited in the design. The voltage reference is implemented using standard CMOS 180 nm technology. The voltage reference provides a voltage of 224.3 mV consuming a quiescent current of 30 μA at room temperature. Post layout simulation results show that the proposed voltage reference has a temperature coefficient of 167.18 ppm/°C and varies only 3mV when there is a ±10% variation in supply voltage. The circuit occupies an area of only 93.6×32.6μm on the chip, making it suitable for area constraint applications.http://www.doiserbia.nb.rs/img/doi/1451-4869/2020/1451-48692001031P.pdfband-gap referencesub 1v voltage referenceptattemperature coefficient |
| spellingShingle | Prasad Guru Shama Kumara A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors Serbian Journal of Electrical Engineering band-gap reference sub 1v voltage reference ptat temperature coefficient |
| title | A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors |
| title_full | A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors |
| title_fullStr | A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors |
| title_full_unstemmed | A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors |
| title_short | A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors |
| title_sort | 167 18 ppm °c temperature coefficient area efficient voltage reference using only mos transistors |
| topic | band-gap reference sub 1v voltage reference ptat temperature coefficient |
| url | http://www.doiserbia.nb.rs/img/doi/1451-4869/2020/1451-48692001031P.pdf |
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