Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
Abstract In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric capacitor (FE-FDSOI/FE-FinFET), are experimen...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2020-06-01
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| Series: | Nano Convergence |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s40580-020-00230-x |
| _version_ | 1811328775570325504 |
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| author | Chankeun Yoon Seungjun Moon Changhwan Shin |
| author_facet | Chankeun Yoon Seungjun Moon Changhwan Shin |
| author_sort | Chankeun Yoon |
| collection | DOAJ |
| description | Abstract In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric capacitor (FE-FDSOI/FE-FinFET), are experimentally studied. The hysteretic property in input transfer characteristic of those devices is desirable for memory device applications, so that the understanding and modulating the hysteresis window is a key knob in designing the devices. It is experimentally observed that the hysteresis window of FE-FDSOI/FE-FinFET is decreased with (i) increasing the area of the ferroelectric capacitor and/or (ii) decreasing the gate area of baseline FET. The way how to control the hysteresis window of FE-FDSOI/FE-FinFET is proposed and discussed in detail. |
| first_indexed | 2024-04-13T15:32:13Z |
| format | Article |
| id | doaj.art-70fc07b13bef42edbb601fc66dedfd90 |
| institution | Directory Open Access Journal |
| issn | 2196-5404 |
| language | English |
| last_indexed | 2024-04-13T15:32:13Z |
| publishDate | 2020-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj.art-70fc07b13bef42edbb601fc66dedfd902022-12-22T02:41:21ZengSpringerOpenNano Convergence2196-54042020-06-01711710.1186/s40580-020-00230-xStudy of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitorChankeun Yoon0Seungjun Moon1Changhwan Shin2Department of Electrical and Computer Engineering, Sungkyunkwan UniversityDepartment of Electrical and Computer Engineering, Sungkyunkwan UniversityDepartment of Electrical and Computer Engineering, Sungkyunkwan UniversityAbstract In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric capacitor (FE-FDSOI/FE-FinFET), are experimentally studied. The hysteretic property in input transfer characteristic of those devices is desirable for memory device applications, so that the understanding and modulating the hysteresis window is a key knob in designing the devices. It is experimentally observed that the hysteresis window of FE-FDSOI/FE-FinFET is decreased with (i) increasing the area of the ferroelectric capacitor and/or (ii) decreasing the gate area of baseline FET. The way how to control the hysteresis window of FE-FDSOI/FE-FinFET is proposed and discussed in detail.http://link.springer.com/article/10.1186/s40580-020-00230-xHysteresisFully-depleted silicon-on-insulator (FDSOI) deviceFin-shaped field-effect-transistor (FinFET)Ferroelectric capacitor |
| spellingShingle | Chankeun Yoon Seungjun Moon Changhwan Shin Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor Nano Convergence Hysteresis Fully-depleted silicon-on-insulator (FDSOI) device Fin-shaped field-effect-transistor (FinFET) Ferroelectric capacitor |
| title | Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor |
| title_full | Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor |
| title_fullStr | Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor |
| title_full_unstemmed | Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor |
| title_short | Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor |
| title_sort | study of a hysteresis window of finfet and fully depleted silicon on insulator fdsoi mosfet with ferroelectric capacitor |
| topic | Hysteresis Fully-depleted silicon-on-insulator (FDSOI) device Fin-shaped field-effect-transistor (FinFET) Ferroelectric capacitor |
| url | http://link.springer.com/article/10.1186/s40580-020-00230-x |
| work_keys_str_mv | AT chankeunyoon studyofahysteresiswindowoffinfetandfullydepletedsilicononinsulatorfdsoimosfetwithferroelectriccapacitor AT seungjunmoon studyofahysteresiswindowoffinfetandfullydepletedsilicononinsulatorfdsoimosfetwithferroelectriccapacitor AT changhwanshin studyofahysteresiswindowoffinfetandfullydepletedsilicononinsulatorfdsoimosfetwithferroelectriccapacitor |