Orientation and strain modulated electronic structures in puckered arsenene nanoribbons
Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is domi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922329 |
| _version_ | 1811321540831084544 |
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| author | Z. Y. Zhang H. N. Cao J. C. Zhang Y. H. Wang D. S. Xue M. S. Si |
| author_facet | Z. Y. Zhang H. N. Cao J. C. Zhang Y. H. Wang D. S. Xue M. S. Si |
| author_sort | Z. Y. Zhang |
| collection | DOAJ |
| description | Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crucial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene. |
| first_indexed | 2024-04-13T13:19:06Z |
| format | Article |
| id | doaj.art-71261613e56141eca398a7a5f0d09aba |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T13:19:06Z |
| publishDate | 2015-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-71261613e56141eca398a7a5f0d09aba2022-12-22T02:45:22ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067117067117-910.1063/1.4922329016506ADVOrientation and strain modulated electronic structures in puckered arsenene nanoribbonsZ. Y. Zhang0H. N. Cao1J. C. Zhang2Y. H. Wang3D. S. Xue4M. S. Si5Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, ChinaCenter for Computational Science, Korea Institute of Science and Technology, Seoul, 136791, KoreaKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, ChinaKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, ChinaKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, ChinaKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, ChinaOrthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crucial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.http://dx.doi.org/10.1063/1.4922329 |
| spellingShingle | Z. Y. Zhang H. N. Cao J. C. Zhang Y. H. Wang D. S. Xue M. S. Si Orientation and strain modulated electronic structures in puckered arsenene nanoribbons AIP Advances |
| title | Orientation and strain modulated electronic structures in puckered arsenene nanoribbons |
| title_full | Orientation and strain modulated electronic structures in puckered arsenene nanoribbons |
| title_fullStr | Orientation and strain modulated electronic structures in puckered arsenene nanoribbons |
| title_full_unstemmed | Orientation and strain modulated electronic structures in puckered arsenene nanoribbons |
| title_short | Orientation and strain modulated electronic structures in puckered arsenene nanoribbons |
| title_sort | orientation and strain modulated electronic structures in puckered arsenene nanoribbons |
| url | http://dx.doi.org/10.1063/1.4922329 |
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