Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanc...
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| Format: | Article |
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MDPI AG
2021-10-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/26/21/6424 |
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| author | Gunawan Witjaksono Muhammad Junaid Mohd Haris Khir Zaka Ullah Nelson Tansu Mohamed Shuaib Bin Mohamed Saheed Muhammad Aadil Siddiqui Saeed S. Ba-Hashwan Abdullah Saleh Algamili Saeed Ahmed Magsi Muhammad Zubair Aslam Rab Nawaz |
| author_facet | Gunawan Witjaksono Muhammad Junaid Mohd Haris Khir Zaka Ullah Nelson Tansu Mohamed Shuaib Bin Mohamed Saheed Muhammad Aadil Siddiqui Saeed S. Ba-Hashwan Abdullah Saleh Algamili Saeed Ahmed Magsi Muhammad Zubair Aslam Rab Nawaz |
| author_sort | Gunawan Witjaksono |
| collection | DOAJ |
| description | Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale. |
| first_indexed | 2024-03-10T05:55:52Z |
| format | Article |
| id | doaj.art-713cc921eb8d4804b686d9df10d5d125 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T05:55:52Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-713cc921eb8d4804b686d9df10d5d1252023-11-22T21:21:07ZengMDPI AGMolecules1420-30492021-10-012621642410.3390/molecules26216424Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene OxideGunawan Witjaksono0Muhammad Junaid1Mohd Haris Khir2Zaka Ullah3Nelson Tansu4Mohamed Shuaib Bin Mohamed Saheed5Muhammad Aadil Siddiqui6Saeed S. Ba-Hashwan7Abdullah Saleh Algamili8Saeed Ahmed Magsi9Muhammad Zubair Aslam10Rab Nawaz11BRI Institute, Jl. Harsono RM No. 2, Ragunan, Jakarta 12550, Passsar Minggu, IndonesiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaSchool of Electrical and Electronic Engineering, The University of Adelaide, Adelaide, SA 5005, AustraliaDepartment of Mechanical Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaDepartment of Fundamental Science, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, MalaysiaGraphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.https://www.mdpi.com/1420-3049/26/21/6424optical bandgap tunningoptoelectronicnitrogen-doped reduced graphene oxideconductivity |
| spellingShingle | Gunawan Witjaksono Muhammad Junaid Mohd Haris Khir Zaka Ullah Nelson Tansu Mohamed Shuaib Bin Mohamed Saheed Muhammad Aadil Siddiqui Saeed S. Ba-Hashwan Abdullah Saleh Algamili Saeed Ahmed Magsi Muhammad Zubair Aslam Rab Nawaz Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide Molecules optical bandgap tunning optoelectronic nitrogen-doped reduced graphene oxide conductivity |
| title | Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide |
| title_full | Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide |
| title_fullStr | Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide |
| title_full_unstemmed | Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide |
| title_short | Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide |
| title_sort | effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen doped reduced graphene oxide |
| topic | optical bandgap tunning optoelectronic nitrogen-doped reduced graphene oxide conductivity |
| url | https://www.mdpi.com/1420-3049/26/21/6424 |
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