Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability
Writing using spin–orbit torque (SOT) has been widely investigated in the field of magnetic random-access memory (MRAM). Heavy metal (HM)/CoFeB/MgO is the core of this SOT-MRAM structure. The heterostructure consisting of Ta as the spin current source and CoFeB/MgO as the perpendicular magnetic anis...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0073430 |
| _version_ | 1818331923092602880 |
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| author | Abhijeet Ranjan Chun-Liang Yang Chia-Chang Lee Rudis Ismael Salinas Padilla Chih-Huang Lai |
| author_facet | Abhijeet Ranjan Chun-Liang Yang Chia-Chang Lee Rudis Ismael Salinas Padilla Chih-Huang Lai |
| author_sort | Abhijeet Ranjan |
| collection | DOAJ |
| description | Writing using spin–orbit torque (SOT) has been widely investigated in the field of magnetic random-access memory (MRAM). Heavy metal (HM)/CoFeB/MgO is the core of this SOT-MRAM structure. The heterostructure consisting of Ta as the spin current source and CoFeB/MgO as the perpendicular magnetic anisotropy (PMA) material is the most researched structure, owing to its high tunneling magnetoresistance ratio. However, Ta is difficult to integrate into the CMOS process due to its poor thermal stability against annealing at temperatures greater than 350 °C. Currently, β-tungsten (W) is the only HM with the CoFeB/MgO system, which can provide both thermal stability and SOT switching. Nevertheless, to achieve the high resistive β phase of W is a challenging task. Here, we report another material rhenium (Re) capable of providing thermally stable PMA up to temperature 425 °C with a perpendicular anisotropic field greater than 5000 Oe; Re possesses a spin hall angle (ϴSH) of 0.065 ± 0.003, and SOT switching can be achieved with a current density around 1.36 × 1011 A/m2. Our findings pave a new avenue for the material design of perpendicular SOT-based MRAM. |
| first_indexed | 2024-12-13T13:27:33Z |
| format | Article |
| id | doaj.art-715d1939bc074ae6925f22e70cec8558 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-13T13:27:33Z |
| publishDate | 2022-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-715d1939bc074ae6925f22e70cec85582022-12-21T23:44:15ZengAIP Publishing LLCAPL Materials2166-532X2022-01-01101011104011104-910.1063/5.0073430Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stabilityAbhijeet Ranjan0Chun-Liang Yang1Chia-Chang Lee2Rudis Ismael Salinas Padilla3Chih-Huang Lai4Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanWriting using spin–orbit torque (SOT) has been widely investigated in the field of magnetic random-access memory (MRAM). Heavy metal (HM)/CoFeB/MgO is the core of this SOT-MRAM structure. The heterostructure consisting of Ta as the spin current source and CoFeB/MgO as the perpendicular magnetic anisotropy (PMA) material is the most researched structure, owing to its high tunneling magnetoresistance ratio. However, Ta is difficult to integrate into the CMOS process due to its poor thermal stability against annealing at temperatures greater than 350 °C. Currently, β-tungsten (W) is the only HM with the CoFeB/MgO system, which can provide both thermal stability and SOT switching. Nevertheless, to achieve the high resistive β phase of W is a challenging task. Here, we report another material rhenium (Re) capable of providing thermally stable PMA up to temperature 425 °C with a perpendicular anisotropic field greater than 5000 Oe; Re possesses a spin hall angle (ϴSH) of 0.065 ± 0.003, and SOT switching can be achieved with a current density around 1.36 × 1011 A/m2. Our findings pave a new avenue for the material design of perpendicular SOT-based MRAM.http://dx.doi.org/10.1063/5.0073430 |
| spellingShingle | Abhijeet Ranjan Chun-Liang Yang Chia-Chang Lee Rudis Ismael Salinas Padilla Chih-Huang Lai Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability APL Materials |
| title | Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability |
| title_full | Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability |
| title_fullStr | Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability |
| title_full_unstemmed | Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability |
| title_short | Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability |
| title_sort | spin orbit torque driven perpendicular magnetization switching in re cofeb mgo with high thermal stability |
| url | http://dx.doi.org/10.1063/5.0073430 |
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