Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio
Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented <i>p</i>-CuI polycrystalline film on top of an amorphous <i>n</i>-SZTO film grown by the RF magnetron sputteri...
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| Format: | Article |
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MDPI AG
2021-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/5/1237 |
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| author | Jeong Hyuk Lee Byeong Hyeon Lee Jeonghun Kang Mangesh Diware Kiseok Jeon Chaehwan Jeong Sang Yeol Lee Kee Hoon Kim |
| author_facet | Jeong Hyuk Lee Byeong Hyeon Lee Jeonghun Kang Mangesh Diware Kiseok Jeon Chaehwan Jeong Sang Yeol Lee Kee Hoon Kim |
| author_sort | Jeong Hyuk Lee |
| collection | DOAJ |
| description | Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented <i>p</i>-CuI polycrystalline film on top of an amorphous <i>n</i>-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering dominantly incurred by Cu vacancy and structural defects at the grain boundaries in the CuI film to result in improved diode performance; the current rectification ratio estimated at ±2 V is enhanced from ≈10<sup>6</sup> to ≈10<sup>7</sup>. Various diode parameters, including ideality factor, reverse saturation current, offset current, series resistance, and parallel resistance, are estimated based on the Shockley diode equation. An energy band diagram exhibiting the type-II band alignment is proposed to explain the diode characteristics. The present <i>p</i>-CuI/<i>n</i>-SZTO diode can be a promising building block for constructing useful optoelectronic components such as a light-emitting diode and a UV photodetector. |
| first_indexed | 2024-03-10T11:37:34Z |
| format | Article |
| id | doaj.art-716fd966a32a4f64844e06a8fb14d19b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T11:37:34Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-716fd966a32a4f64844e06a8fb14d19b2023-11-21T18:44:52ZengMDPI AGNanomaterials2079-49912021-05-01115123710.3390/nano11051237Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification RatioJeong Hyuk Lee0Byeong Hyeon Lee1Jeonghun Kang2Mangesh Diware3Kiseok Jeon4Chaehwan Jeong5Sang Yeol Lee6Kee Hoon Kim7Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, KoreaDepartment of Microdevice Engineering, Korea University, Seoul 02841, KoreaCenter for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, KoreaCenter for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, KoreaDepartment of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, KoreaSmart Energy and Nano Photonics R&D Group, Korea Institute of Industrial Technology, Gwangju 61012, KoreaDepartment of Electronic Engineering, Gachon University, Seongnam-si 13120, KoreaCenter for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, KoreaTransparent <i>p</i>-CuI/<i>n</i>-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented <i>p</i>-CuI polycrystalline film on top of an amorphous <i>n</i>-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering dominantly incurred by Cu vacancy and structural defects at the grain boundaries in the CuI film to result in improved diode performance; the current rectification ratio estimated at ±2 V is enhanced from ≈10<sup>6</sup> to ≈10<sup>7</sup>. Various diode parameters, including ideality factor, reverse saturation current, offset current, series resistance, and parallel resistance, are estimated based on the Shockley diode equation. An energy band diagram exhibiting the type-II band alignment is proposed to explain the diode characteristics. The present <i>p</i>-CuI/<i>n</i>-SZTO diode can be a promising building block for constructing useful optoelectronic components such as a light-emitting diode and a UV photodetector.https://www.mdpi.com/2079-4991/11/5/1237copper iodide (CuI)SiZnSnO (SZTO)transparent diodecurrent rectification ratioenergy band alignment |
| spellingShingle | Jeong Hyuk Lee Byeong Hyeon Lee Jeonghun Kang Mangesh Diware Kiseok Jeon Chaehwan Jeong Sang Yeol Lee Kee Hoon Kim Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio Nanomaterials copper iodide (CuI) SiZnSnO (SZTO) transparent diode current rectification ratio energy band alignment |
| title | Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio |
| title_full | Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio |
| title_fullStr | Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio |
| title_full_unstemmed | Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio |
| title_short | Characteristics and Electronic Band Alignment of a Transparent <i>p</i>-CuI/<i>n</i>-SiZnSnO Heterojunction Diode with a High Rectification Ratio |
| title_sort | characteristics and electronic band alignment of a transparent i p i cui i n i siznsno heterojunction diode with a high rectification ratio |
| topic | copper iodide (CuI) SiZnSnO (SZTO) transparent diode current rectification ratio energy band alignment |
| url | https://www.mdpi.com/2079-4991/11/5/1237 |
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