Spin–orbit torque flash analog-to-digital converter
Abstract Although analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered a...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-35845-7 |
| _version_ | 1797806782462033920 |
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| author | Hamdam Ghanatian Luana Benetti Pedro Anacleto Tim Böhnert Hooman Farkhani Ricardo Ferreira Farshad Moradi |
| author_facet | Hamdam Ghanatian Luana Benetti Pedro Anacleto Tim Böhnert Hooman Farkhani Ricardo Ferreira Farshad Moradi |
| author_sort | Hamdam Ghanatian |
| collection | DOAJ |
| description | Abstract Although analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic computing, and so on. In this paper, a proof-of-concept of a 3-bit spin-CMOS Flash ADC using in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin–orbit torque (SOT) switching mechanism is designed, fabricated and characterized. In this ADC, each MTJ plays the role of a comparator whose threshold is set by the engineering of the heavy metal (HM) width. Such an approach can reduce the ADC footprint. Monte-Carlo simulations based on the experimental measurements show the process variations/mismatch limits the accuracy of the proposed ADC to 2 bits. Moreover, the maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.739 LSB (least significant bit) and 0.7319 LSB, respectively. |
| first_indexed | 2024-03-13T06:12:35Z |
| format | Article |
| id | doaj.art-717b7286cdc54a1b8038fea21d258969 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-13T06:12:35Z |
| publishDate | 2023-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-717b7286cdc54a1b8038fea21d2589692023-06-11T11:11:28ZengNature PortfolioScientific Reports2045-23222023-06-011311810.1038/s41598-023-35845-7Spin–orbit torque flash analog-to-digital converterHamdam Ghanatian0Luana Benetti1Pedro Anacleto2Tim Böhnert3Hooman Farkhani4Ricardo Ferreira5Farshad Moradi6Department of Electrical and Computer Engineering, Aarhus UniversityInternational Iberian Nanotechnology Laboratory (INL)International Iberian Nanotechnology Laboratory (INL)International Iberian Nanotechnology Laboratory (INL)Department of Electrical and Computer Engineering, Aarhus UniversityInternational Iberian Nanotechnology Laboratory (INL)Department of Electrical and Computer Engineering, Aarhus UniversityAbstract Although analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic computing, and so on. In this paper, a proof-of-concept of a 3-bit spin-CMOS Flash ADC using in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin–orbit torque (SOT) switching mechanism is designed, fabricated and characterized. In this ADC, each MTJ plays the role of a comparator whose threshold is set by the engineering of the heavy metal (HM) width. Such an approach can reduce the ADC footprint. Monte-Carlo simulations based on the experimental measurements show the process variations/mismatch limits the accuracy of the proposed ADC to 2 bits. Moreover, the maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.739 LSB (least significant bit) and 0.7319 LSB, respectively.https://doi.org/10.1038/s41598-023-35845-7 |
| spellingShingle | Hamdam Ghanatian Luana Benetti Pedro Anacleto Tim Böhnert Hooman Farkhani Ricardo Ferreira Farshad Moradi Spin–orbit torque flash analog-to-digital converter Scientific Reports |
| title | Spin–orbit torque flash analog-to-digital converter |
| title_full | Spin–orbit torque flash analog-to-digital converter |
| title_fullStr | Spin–orbit torque flash analog-to-digital converter |
| title_full_unstemmed | Spin–orbit torque flash analog-to-digital converter |
| title_short | Spin–orbit torque flash analog-to-digital converter |
| title_sort | spin orbit torque flash analog to digital converter |
| url | https://doi.org/10.1038/s41598-023-35845-7 |
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