A Vertical Single Transistor Neuron with Core–Shell Dual-Gate for Excitatory–Inhibitory Function and Tunable Firing Threshold Voltage
A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed shell gate and core gate to serve an excitatory–i...
Main Authors: | Taegoon Lee, Seung-Bae Jeon, Daewon Kim |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-10-01
|
Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/10/1740 |
Similar Items
-
An Artificial Neuron with a Leaky Fin‐Shaped Field‐Effect Transistor for a Highly Scalable Capacitive Neural Network
by: Joon-Kyu Han, et al.
Published: (2022-12-01) -
High-Performance and Energy-Efficient Leaky Integrate-and-Fire Neuron and Spike Timing-Dependent Plasticity Circuits in 7nm FinFET Technology
by: Mohammad Khaleqi Qaleh Jooq, et al.
Published: (2023-01-01) -
Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing
by: Momo Zhao, et al.
Published: (2022-04-01) -
Efficient Coding and Energy Efficiency Are Promoted by Balanced Excitatory and Inhibitory Synaptic Currents in Neuronal Network
by: Lianchun Yu, et al.
Published: (2018-05-01) -
An Attention Mechanism‐Based Adaptive Feedback Computing Component by Neuromorphic Ion Gated MoS2 Transistors
by: Chang Liu, et al.
Published: (2023-03-01)