Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
Perovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material...
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MDPI AG
2022-04-01
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Online Access: | https://www.mdpi.com/2079-4991/12/9/1467 |
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author | Ravi P. Srivastava Hyun-Suh Jung Dahl-Young Khang |
author_facet | Ravi P. Srivastava Hyun-Suh Jung Dahl-Young Khang |
author_sort | Ravi P. Srivastava |
collection | DOAJ |
description | Perovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material. Furthermore, doping has its own challenges affecting the processing and performance of the devices. Therefore, the need for low-cost, dopant-free hole transport materials is an urgent and critical issue for the commercialization of PSCs. In this study, n–i–p structure PSCs were fabricated in an ambient environment with cuprous iodide (CuI) HTL, employing a novel transfer-printing technique, in order to avoid the harmful interaction between the perovskite surface and the solvents of CuI. Moreover, in fabricated PSCs, the SnO<sub>2</sub> electron transport layer (ETL) has been incorporated to reduce the processing temperature, as previously reported (n–i–p) devices with CuI HTL are based on TiO<sub>2</sub>, which is a high-temperature processed ETL. PSCs fabricated at 80 °C transfer-printing temperature with 20 nm iodized copper, under 1 sun illumination showed a promising efficiency of 8.3%, (J<sub>SC</sub> and FF; 19.3 A/cm<sup>2</sup> and 53.8%), which is comparable with undoped spiro-OMeTAD PSCs and is the highest among the ambient-environment-fabricated PSCs utilizing CuI HTL. |
first_indexed | 2024-03-10T03:51:42Z |
format | Article |
id | doaj.art-719eec762c60456587963a223d077692 |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-10T03:51:42Z |
publishDate | 2022-04-01 |
publisher | MDPI AG |
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series | Nanomaterials |
spelling | doaj.art-719eec762c60456587963a223d0776922023-11-23T08:54:39ZengMDPI AGNanomaterials2079-49912022-04-01129146710.3390/nano12091467Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar CellsRavi P. Srivastava0Hyun-Suh Jung1Dahl-Young Khang2Department of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaPerovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material. Furthermore, doping has its own challenges affecting the processing and performance of the devices. Therefore, the need for low-cost, dopant-free hole transport materials is an urgent and critical issue for the commercialization of PSCs. In this study, n–i–p structure PSCs were fabricated in an ambient environment with cuprous iodide (CuI) HTL, employing a novel transfer-printing technique, in order to avoid the harmful interaction between the perovskite surface and the solvents of CuI. Moreover, in fabricated PSCs, the SnO<sub>2</sub> electron transport layer (ETL) has been incorporated to reduce the processing temperature, as previously reported (n–i–p) devices with CuI HTL are based on TiO<sub>2</sub>, which is a high-temperature processed ETL. PSCs fabricated at 80 °C transfer-printing temperature with 20 nm iodized copper, under 1 sun illumination showed a promising efficiency of 8.3%, (J<sub>SC</sub> and FF; 19.3 A/cm<sup>2</sup> and 53.8%), which is comparable with undoped spiro-OMeTAD PSCs and is the highest among the ambient-environment-fabricated PSCs utilizing CuI HTL.https://www.mdpi.com/2079-4991/12/9/1467perovskite solar cellshole-transporting layercuprous iodidetransfer printingambient environment processing |
spellingShingle | Ravi P. Srivastava Hyun-Suh Jung Dahl-Young Khang Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells Nanomaterials perovskite solar cells hole-transporting layer cuprous iodide transfer printing ambient environment processing |
title | Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells |
title_full | Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells |
title_fullStr | Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells |
title_full_unstemmed | Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells |
title_short | Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells |
title_sort | transfer printed cuprous iodide cui hole transporting layer for low temperature processed perovskite solar cells |
topic | perovskite solar cells hole-transporting layer cuprous iodide transfer printing ambient environment processing |
url | https://www.mdpi.com/2079-4991/12/9/1467 |
work_keys_str_mv | AT ravipsrivastava transferprintedcuprousiodidecuiholetransportinglayerforlowtemperatureprocessedperovskitesolarcells AT hyunsuhjung transferprintedcuprousiodidecuiholetransportinglayerforlowtemperatureprocessedperovskitesolarcells AT dahlyoungkhang transferprintedcuprousiodidecuiholetransportinglayerforlowtemperatureprocessedperovskitesolarcells |