Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells

Perovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material...

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Main Authors: Ravi P. Srivastava, Hyun-Suh Jung, Dahl-Young Khang
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/9/1467
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author Ravi P. Srivastava
Hyun-Suh Jung
Dahl-Young Khang
author_facet Ravi P. Srivastava
Hyun-Suh Jung
Dahl-Young Khang
author_sort Ravi P. Srivastava
collection DOAJ
description Perovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material. Furthermore, doping has its own challenges affecting the processing and performance of the devices. Therefore, the need for low-cost, dopant-free hole transport materials is an urgent and critical issue for the commercialization of PSCs. In this study, n–i–p structure PSCs were fabricated in an ambient environment with cuprous iodide (CuI) HTL, employing a novel transfer-printing technique, in order to avoid the harmful interaction between the perovskite surface and the solvents of CuI. Moreover, in fabricated PSCs, the SnO<sub>2</sub> electron transport layer (ETL) has been incorporated to reduce the processing temperature, as previously reported (n–i–p) devices with CuI HTL are based on TiO<sub>2</sub>, which is a high-temperature processed ETL. PSCs fabricated at 80 °C transfer-printing temperature with 20 nm iodized copper, under 1 sun illumination showed a promising efficiency of 8.3%, (J<sub>SC</sub> and FF; 19.3 A/cm<sup>2</sup> and 53.8%), which is comparable with undoped spiro-OMeTAD PSCs and is the highest among the ambient-environment-fabricated PSCs utilizing CuI HTL.
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spelling doaj.art-719eec762c60456587963a223d0776922023-11-23T08:54:39ZengMDPI AGNanomaterials2079-49912022-04-01129146710.3390/nano12091467Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar CellsRavi P. Srivastava0Hyun-Suh Jung1Dahl-Young Khang2Department of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaPerovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material. Furthermore, doping has its own challenges affecting the processing and performance of the devices. Therefore, the need for low-cost, dopant-free hole transport materials is an urgent and critical issue for the commercialization of PSCs. In this study, n–i–p structure PSCs were fabricated in an ambient environment with cuprous iodide (CuI) HTL, employing a novel transfer-printing technique, in order to avoid the harmful interaction between the perovskite surface and the solvents of CuI. Moreover, in fabricated PSCs, the SnO<sub>2</sub> electron transport layer (ETL) has been incorporated to reduce the processing temperature, as previously reported (n–i–p) devices with CuI HTL are based on TiO<sub>2</sub>, which is a high-temperature processed ETL. PSCs fabricated at 80 °C transfer-printing temperature with 20 nm iodized copper, under 1 sun illumination showed a promising efficiency of 8.3%, (J<sub>SC</sub> and FF; 19.3 A/cm<sup>2</sup> and 53.8%), which is comparable with undoped spiro-OMeTAD PSCs and is the highest among the ambient-environment-fabricated PSCs utilizing CuI HTL.https://www.mdpi.com/2079-4991/12/9/1467perovskite solar cellshole-transporting layercuprous iodidetransfer printingambient environment processing
spellingShingle Ravi P. Srivastava
Hyun-Suh Jung
Dahl-Young Khang
Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
Nanomaterials
perovskite solar cells
hole-transporting layer
cuprous iodide
transfer printing
ambient environment processing
title Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
title_full Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
title_fullStr Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
title_full_unstemmed Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
title_short Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells
title_sort transfer printed cuprous iodide cui hole transporting layer for low temperature processed perovskite solar cells
topic perovskite solar cells
hole-transporting layer
cuprous iodide
transfer printing
ambient environment processing
url https://www.mdpi.com/2079-4991/12/9/1467
work_keys_str_mv AT ravipsrivastava transferprintedcuprousiodidecuiholetransportinglayerforlowtemperatureprocessedperovskitesolarcells
AT hyunsuhjung transferprintedcuprousiodidecuiholetransportinglayerforlowtemperatureprocessedperovskitesolarcells
AT dahlyoungkhang transferprintedcuprousiodidecuiholetransportinglayerforlowtemperatureprocessedperovskitesolarcells