Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films
In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiOx films after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2015-12-01
|
| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/821 |
| Summary: | In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiOx films after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-stoichiometric SiOx film after laser annealing. It is shown that temperature 1800 K on a SiOx surface is sufficient for separating the film material on silicon dioxide and its nanoparticles. IR-investigations confirm this separating. <br />Keywords: silicon oxide, nanocrystal, laser annealing, thermal conductivity equation. |
|---|---|
| ISSN: | 1729-4428 2309-8589 |