Analysis and improvement of self-heating effect based on GaN HEMT devices
Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability. In order to address this problem, this paper changes the mate...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac82a8 |
| _version_ | 1797746337314242560 |
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| author | Zhipeng Zuo Naiyun Tang Hui Chen |
| author_facet | Zhipeng Zuo Naiyun Tang Hui Chen |
| author_sort | Zhipeng Zuo |
| collection | DOAJ |
| description | Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability. In order to address this problem, this paper changes the material and structure of the device. It successfully reduces the maximum temperature of the device to 335 K by using a new structure of the diamond substrate, diamond heat sink layer, and InGaN insertion layer. Simulation results show that the new structure has a 35% reduction in maximum temperature, a 61% increase in current, a 37% improvement in maximum transconductance, and a 35% improvement in current collapse. At the same time, the new structure also improves the electron mobility of the channel. |
| first_indexed | 2024-03-12T15:35:24Z |
| format | Article |
| id | doaj.art-71b43a77fd2146d2aa5ed32cf5bf819b |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:35:24Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-71b43a77fd2146d2aa5ed32cf5bf819b2023-08-09T16:14:30ZengIOP PublishingMaterials Research Express2053-15912022-01-019707590310.1088/2053-1591/ac82a8Analysis and improvement of self-heating effect based on GaN HEMT devicesZhipeng Zuo0https://orcid.org/0000-0003-3340-7416Naiyun Tang1Hui Chen2Shanghai University of Electric Power , School of Electronics and Information Engineering, 200000, Shanghai, People’s Republic of ChinaShanghai University of Electric Power , School of Electronics and Information Engineering, 200000, Shanghai, People’s Republic of ChinaShanghai University of Electric Power , School of Electronics and Information Engineering, 200000, Shanghai, People’s Republic of ChinaGallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability. In order to address this problem, this paper changes the material and structure of the device. It successfully reduces the maximum temperature of the device to 335 K by using a new structure of the diamond substrate, diamond heat sink layer, and InGaN insertion layer. Simulation results show that the new structure has a 35% reduction in maximum temperature, a 61% increase in current, a 37% improvement in maximum transconductance, and a 35% improvement in current collapse. At the same time, the new structure also improves the electron mobility of the channel.https://doi.org/10.1088/2053-1591/ac82a8GaN HEMTself-heating effectcurrent collapse |
| spellingShingle | Zhipeng Zuo Naiyun Tang Hui Chen Analysis and improvement of self-heating effect based on GaN HEMT devices Materials Research Express GaN HEMT self-heating effect current collapse |
| title | Analysis and improvement of self-heating effect based on GaN HEMT devices |
| title_full | Analysis and improvement of self-heating effect based on GaN HEMT devices |
| title_fullStr | Analysis and improvement of self-heating effect based on GaN HEMT devices |
| title_full_unstemmed | Analysis and improvement of self-heating effect based on GaN HEMT devices |
| title_short | Analysis and improvement of self-heating effect based on GaN HEMT devices |
| title_sort | analysis and improvement of self heating effect based on gan hemt devices |
| topic | GaN HEMT self-heating effect current collapse |
| url | https://doi.org/10.1088/2053-1591/ac82a8 |
| work_keys_str_mv | AT zhipengzuo analysisandimprovementofselfheatingeffectbasedonganhemtdevices AT naiyuntang analysisandimprovementofselfheatingeffectbasedonganhemtdevices AT huichen analysisandimprovementofselfheatingeffectbasedonganhemtdevices |