Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photolumin...

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Bibliographic Details
Main Authors: Luis Arturo Martínez-Ara, Jorge Ricardo Aguilar-Hernández, Jorge Sastré-Hernández, Luis Alberto Hernández-Hernández, María de los Ángeles Hernández-Pérez, Patricia Maldonado-Altamirano, Rogelio Mendoza-Pérez, Gerardo Contreras-Puente
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2019-01-01
Series:Materials Research
Subjects:
Gallium nitride
Pulsed Laser Deposition
Photoluminescence
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392019000200206&tlng=en

Internet

http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392019000200206&tlng=en

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