Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes
Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ) n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2015-02-01
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| Series: | Frontiers in Materials |
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| Online Access: | http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00008/full |
| _version_ | 1818542129548361728 |
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| author | Si eLi Yuhan eGao Ruixin eFan Dongsheng eLi Deren eYang |
| author_facet | Si eLi Yuhan eGao Ruixin eFan Dongsheng eLi Deren eYang |
| author_sort | Si eLi |
| collection | DOAJ |
| description | Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ) n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV ) was observed besides the band-to-band line (~1.1eV) under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice. |
| first_indexed | 2024-12-11T22:18:06Z |
| format | Article |
| id | doaj.art-7213b8fd3f52405c8fe69736ac46e9bc |
| institution | Directory Open Access Journal |
| issn | 2296-8016 |
| language | English |
| last_indexed | 2024-12-11T22:18:06Z |
| publishDate | 2015-02-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Materials |
| spelling | doaj.art-7213b8fd3f52405c8fe69736ac46e9bc2022-12-22T00:48:33ZengFrontiers Media S.A.Frontiers in Materials2296-80162015-02-01210.3389/fmats.2015.00008114726Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodesSi eLi0Yuhan eGao1Ruixin eFan2Dongsheng eLi3Deren eYang4Zhejiang UniversityZhejiang UniversityZhejiang UniversityZhejiang UniversityZhejiang UniversitySilicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ) n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV ) was observed besides the band-to-band line (~1.1eV) under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00008/fullBoronDiffusionSiliconelectroluminescencepn |
| spellingShingle | Si eLi Yuhan eGao Ruixin eFan Dongsheng eLi Deren eYang Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes Frontiers in Materials Boron Diffusion Silicon electroluminescence pn |
| title | Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes |
| title_full | Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes |
| title_fullStr | Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes |
| title_full_unstemmed | Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes |
| title_short | Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes |
| title_sort | room temperature near infrared electroluminescence from boron diffused silicon pn junction diodes |
| topic | Boron Diffusion Silicon electroluminescence pn |
| url | http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00008/full |
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