Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ) n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6...

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Bibliographic Details
Main Authors: Si eLi, Yuhan eGao, Ruixin eFan, Dongsheng eLi, Deren eYang
Format: Article
Language:English
Published: Frontiers Media S.A. 2015-02-01
Series:Frontiers in Materials
Subjects:
Boron
Diffusion
Silicon
electroluminescence
pn
Online Access:http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00008/full

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