On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment
Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with...
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| Format: | Article |
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Elsevier
2022-01-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721010913 |
| _version_ | 1819098162261917696 |
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| author | L. Zhang C.L. Heng C.N. Zhao W.Y. Su Y.K. Gao P.G. Yin T.G. Finstad |
| author_facet | L. Zhang C.L. Heng C.N. Zhao W.Y. Su Y.K. Gao P.G. Yin T.G. Finstad |
| author_sort | L. Zhang |
| collection | DOAJ |
| description | Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 °C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 °C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films. |
| first_indexed | 2024-12-22T00:26:36Z |
| format | Article |
| id | doaj.art-721d4e385e74414ca622c5db7a564510 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-22T00:26:36Z |
| publishDate | 2022-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-721d4e385e74414ca622c5db7a5645102022-12-21T18:45:03ZengElsevierResults in Physics2211-37972022-01-0132105121On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatmentL. Zhang0C.L. Heng1C.N. Zhao2W.Y. Su3Y.K. Gao4P.G. Yin5T.G. Finstad6School of Physics, Beijing Institute of Technology, Beijing 100081, PR ChinaSchool of Physics, Beijing Institute of Technology, Beijing 100081, PR China; Corresponding authors.School of Physics, Beijing Institute of Technology, Beijing 100081, PR ChinaSchool of Physics, Beijing Institute of Technology, Beijing 100081, PR ChinaKey Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University, Beijing 100191, PR ChinaKey Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University, Beijing 100191, PR ChinaPhysics Department, University of Oslo, PO Box 1048, Blindern, N-0316 Oslo, Norway; Corresponding authors.Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 °C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 °C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films.http://www.sciencedirect.com/science/article/pii/S2211379721010913ZnOThin filmsUV emissionTb dopingTiN nanoparticles |
| spellingShingle | L. Zhang C.L. Heng C.N. Zhao W.Y. Su Y.K. Gao P.G. Yin T.G. Finstad On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment Results in Physics ZnO Thin films UV emission Tb doping TiN nanoparticles |
| title | On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment |
| title_full | On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment |
| title_fullStr | On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment |
| title_full_unstemmed | On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment |
| title_short | On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment |
| title_sort | on the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment |
| topic | ZnO Thin films UV emission Tb doping TiN nanoparticles |
| url | http://www.sciencedirect.com/science/article/pii/S2211379721010913 |
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