Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
The excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
American Association for the Advancement of Science (AAAS)
2022-01-01
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Series: | Research |
Online Access: | http://dx.doi.org/10.34133/2022/9878352 |
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author | Runjiang Shen Yanghua Lu Xutao Yu Qi Ge Huiming Zhong Shisheng Lin |
author_facet | Runjiang Shen Yanghua Lu Xutao Yu Qi Ge Huiming Zhong Shisheng Lin |
author_sort | Runjiang Shen |
collection | DOAJ |
description | The excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the static diode, which may bring a subverting insight of insulators. Herein, we discovered insulators could be conductive under the framework of DD; the HC process inside the rebounding procedure caused by the disappearance and reestablishment of the built-in electric field at the interface of insulator/semiconductor heterostructure is the main generation mechanism. This type of DD can response fast up to 1 μs to mechanical excitation with an output of ~10 V, showing a wide band frequency response under different input frequencies from 0 to 40 kHz. It can work under extreme environments; various applications like underwater communication network, self-powered sensor/detector in the sea environment, and life health monitoring can be achieved. |
first_indexed | 2024-03-07T18:39:20Z |
format | Article |
id | doaj.art-723b60dca06a4768ac992b2becc7dd6b |
institution | Directory Open Access Journal |
issn | 2639-5274 |
language | English |
last_indexed | 2024-03-07T18:39:20Z |
publishDate | 2022-01-01 |
publisher | American Association for the Advancement of Science (AAAS) |
record_format | Article |
series | Research |
spelling | doaj.art-723b60dca06a4768ac992b2becc7dd6b2024-03-02T04:11:47ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742022-01-01202210.34133/2022/9878352Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers ProcessRunjiang Shen0Yanghua Lu1Xutao Yu2Qi Ge3Huiming Zhong4Shisheng Lin5College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaChongqing 2D Material Institute, Chongqing 410020, ChinaDepartment of Emergency, The Second Affiliated Hospital, Zhejiang University School of Medicine, Zhejiang University, Hangzhou 310009, ChinaCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; Chongqing 2D Material Institute, Chongqing 410020, China; State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China; Hangzhou Gelanfeng Technology Co. Ltd., Hangzhou 310051, ChinaThe excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the static diode, which may bring a subverting insight of insulators. Herein, we discovered insulators could be conductive under the framework of DD; the HC process inside the rebounding procedure caused by the disappearance and reestablishment of the built-in electric field at the interface of insulator/semiconductor heterostructure is the main generation mechanism. This type of DD can response fast up to 1 μs to mechanical excitation with an output of ~10 V, showing a wide band frequency response under different input frequencies from 0 to 40 kHz. It can work under extreme environments; various applications like underwater communication network, self-powered sensor/detector in the sea environment, and life health monitoring can be achieved.http://dx.doi.org/10.34133/2022/9878352 |
spellingShingle | Runjiang Shen Yanghua Lu Xutao Yu Qi Ge Huiming Zhong Shisheng Lin Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process Research |
title | Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process |
title_full | Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process |
title_fullStr | Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process |
title_full_unstemmed | Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process |
title_short | Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process |
title_sort | broadband insulator based dynamic diode with ultrafast hot carriers process |
url | http://dx.doi.org/10.34133/2022/9878352 |
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