Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process

The excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the...

Full description

Bibliographic Details
Main Authors: Runjiang Shen, Yanghua Lu, Xutao Yu, Qi Ge, Huiming Zhong, Shisheng Lin
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS) 2022-01-01
Series:Research
Online Access:http://dx.doi.org/10.34133/2022/9878352
_version_ 1797287795779174400
author Runjiang Shen
Yanghua Lu
Xutao Yu
Qi Ge
Huiming Zhong
Shisheng Lin
author_facet Runjiang Shen
Yanghua Lu
Xutao Yu
Qi Ge
Huiming Zhong
Shisheng Lin
author_sort Runjiang Shen
collection DOAJ
description The excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the static diode, which may bring a subverting insight of insulators. Herein, we discovered insulators could be conductive under the framework of DD; the HC process inside the rebounding procedure caused by the disappearance and reestablishment of the built-in electric field at the interface of insulator/semiconductor heterostructure is the main generation mechanism. This type of DD can response fast up to 1 μs to mechanical excitation with an output of ~10 V, showing a wide band frequency response under different input frequencies from 0 to 40 kHz. It can work under extreme environments; various applications like underwater communication network, self-powered sensor/detector in the sea environment, and life health monitoring can be achieved.
first_indexed 2024-03-07T18:39:20Z
format Article
id doaj.art-723b60dca06a4768ac992b2becc7dd6b
institution Directory Open Access Journal
issn 2639-5274
language English
last_indexed 2024-03-07T18:39:20Z
publishDate 2022-01-01
publisher American Association for the Advancement of Science (AAAS)
record_format Article
series Research
spelling doaj.art-723b60dca06a4768ac992b2becc7dd6b2024-03-02T04:11:47ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742022-01-01202210.34133/2022/9878352Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers ProcessRunjiang Shen0Yanghua Lu1Xutao Yu2Qi Ge3Huiming Zhong4Shisheng Lin5College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaChongqing 2D Material Institute, Chongqing 410020, ChinaDepartment of Emergency, The Second Affiliated Hospital, Zhejiang University School of Medicine, Zhejiang University, Hangzhou 310009, ChinaCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; Chongqing 2D Material Institute, Chongqing 410020, China; State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China; Hangzhou Gelanfeng Technology Co. Ltd., Hangzhou 310051, ChinaThe excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the static diode, which may bring a subverting insight of insulators. Herein, we discovered insulators could be conductive under the framework of DD; the HC process inside the rebounding procedure caused by the disappearance and reestablishment of the built-in electric field at the interface of insulator/semiconductor heterostructure is the main generation mechanism. This type of DD can response fast up to 1 μs to mechanical excitation with an output of ~10 V, showing a wide band frequency response under different input frequencies from 0 to 40 kHz. It can work under extreme environments; various applications like underwater communication network, self-powered sensor/detector in the sea environment, and life health monitoring can be achieved.http://dx.doi.org/10.34133/2022/9878352
spellingShingle Runjiang Shen
Yanghua Lu
Xutao Yu
Qi Ge
Huiming Zhong
Shisheng Lin
Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
Research
title Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
title_full Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
title_fullStr Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
title_full_unstemmed Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
title_short Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process
title_sort broadband insulator based dynamic diode with ultrafast hot carriers process
url http://dx.doi.org/10.34133/2022/9878352
work_keys_str_mv AT runjiangshen broadbandinsulatorbaseddynamicdiodewithultrafasthotcarriersprocess
AT yanghualu broadbandinsulatorbaseddynamicdiodewithultrafasthotcarriersprocess
AT xutaoyu broadbandinsulatorbaseddynamicdiodewithultrafasthotcarriersprocess
AT qige broadbandinsulatorbaseddynamicdiodewithultrafasthotcarriersprocess
AT huimingzhong broadbandinsulatorbaseddynamicdiodewithultrafasthotcarriersprocess
AT shishenglin broadbandinsulatorbaseddynamicdiodewithultrafasthotcarriersprocess