Characterization of vacancy defects in Cu(In,Ga)Se2 by positron annihilation spectroscopy

Characterization of vacancy defects in Cu(In,Ga)Se2 by positron annihilation spectroscopy

The photovoltaic performance of Cu(In1-x,Gax)Se2 (CIGS) materials is commonly assumed to be degraded by the presence of vacancy-related defects. However, experimental identification of specific vacancy defects remains challenging. In this work we report positron lifetime measurements on CIGS crystal...

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Bibliographic Details
Main Authors:	M. R. M. Elsharkawy, G. S. Kanda, M. V. Yakushev, E. E. Abdel-Hady, D. J. Keeble
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-12-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4972251

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