Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped...

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Bibliographic Details
Main Authors: Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Micromachines
Subjects:
tunneling field-effect transistors (TFETS)
single-event effect (SEE)
T-shaped gate tunneling field-effect transistors (TGTFET)
fully depleted silicon on insulator (FDSOI)
linear energy transfer (LET)
Online Access:https://www.mdpi.com/2072-666X/12/6/609

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