Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped...
Main Authors: | Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-05-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/12/6/609 |
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