Ferroelectric Field-Effect Transistor-Based 3-D NAND Architecture for Energy-Efficient on-Chip Training Accelerator
Different from the deep neural network (DNN) inference process, the training process produces a huge amount of intermediate data to compute the new weights of the network. Generally, the on-chip global buffer (e.g., SRAM cache) has limited capacity because of its low memory density; therefore, off-c...
Main Authors: | Wonbo Shim, Shimeng Yu |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
|
Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9350264/ |
Similar Items
-
System-Technology Codesign of 3-D NAND Flash-Based Compute-in-Memory Inference Engine
by: Wonbo Shim, et al.
Published: (2021-01-01) -
A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations
by: Seonjun Choi, et al.
Published: (2020-12-01) -
A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied
by: Seonjun Choi, et al.
Published: (2022-06-01) -
Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories
by: Ilsik Ham, et al.
Published: (2020-12-01) -
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications
by: Seonjun Choi, et al.
Published: (2024-02-01)