| Summary: | In recent years, biopolymers are highly desired for their application in optic electronic devices, because of their unique structure and fantastic characteristics. In this work, a non-volatile memory (NVM) device based on the bio thin-film transistor (TFT) was fabricated through applying a new RNA–CTMA (cetyltrimethylammonium) complex as a gate dielectric. The physicochemical performance, including UV, CD spectral, thermal stability, surface roughness, and microstructure, has been investigated systematically. The RNA–CTMA complex film exhibits strong absorption with a well-defined absorption peak around 260 nm, the RMS roughness is ~2.1 nm, and displayed excellent thermal stability, up to 240 °C. In addition, the RNA–CTMA complex-based memory device shows good electric performance, with a large memory window up to 52 V. This demonstrates that the RNA–CTMA complex is a promising candidate for low cost, low-temperature processes, and as an environmentally friendly electronic device.
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