Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
In this work, the current-voltage and photoelectric spectral characteristics of double heterodiodes por-Si/Si-p/Si-n and a reference diode with a p–n junction at room temperature are analyzed and compared with data on the thickness of porous silicon layers and photoluminescence spectra for the synth...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Peter the Great St.Petersburg Polytechnic University
2022-10-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2022.58.24/ |
| _version_ | 1811325661237739520 |
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| author | Yan Dmitriy Galkin Nikolay Galkin Konstantin Chernev Igor |
| author_facet | Yan Dmitriy Galkin Nikolay Galkin Konstantin Chernev Igor |
| author_sort | Yan Dmitriy |
| collection | DOAJ |
| description | In this work, the current-voltage and photoelectric spectral characteristics of double heterodiodes por-Si/Si-p/Si-n and a reference diode with a p–n junction at room temperature are analyzed and compared with data on the thickness of porous silicon layers and photoluminescence spectra for the synthesized heterostructures. It is shown that photospectral sensitivity in the region of 400–800 nm is exhibited by diodes with a single-layer structure of porous silicon whose thickness does not exceed 2 µm. In this case, the amplitude of the spectral photoresponse decreases with a decrease in the thickness of the porous layer. As for diodes with a two-layer structure of porous silicon (ordinary porous and tree-like porous) and thicknesses from 4.5 µm to 17.4 µm, currents do not flow due to rapid oxidation of such structures. A band energy diagram of a double heterodiode with a layer of porous silicon is proposed based on the experimental data. |
| first_indexed | 2024-04-13T14:36:59Z |
| format | Article |
| id | doaj.art-72c9d71313394235aaa4accacfe643ee |
| institution | Directory Open Access Journal |
| issn | 2405-7223 |
| language | English |
| last_indexed | 2024-04-13T14:36:59Z |
| publishDate | 2022-10-01 |
| publisher | Peter the Great St.Petersburg Polytechnic University |
| record_format | Article |
| series | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| spelling | doaj.art-72c9d71313394235aaa4accacfe643ee2022-12-22T02:43:00ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232022-10-01153.110.18721/JPM.153.12420714726Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thicknessYan Dmitriy0https://orcid.org/0000-0002-0602-9301Galkin Nikolay1https://orcid.org/0000-0003-4127-2988Galkin Konstantin2https://orcid.org/0000-0001-5386-1013Chernev Igor3https://orcid.org/0000-0002-8726-9832Far Eastern State Transport UniversityInstitute of Automation and Control Processes FEB RASInstitute of Automation and Control Processes Far Eastern Branch of the Russian Academy of SciencesInstitute of Automation and Control Processes Far Eastern Branch of the Russian Academy of SciencesIn this work, the current-voltage and photoelectric spectral characteristics of double heterodiodes por-Si/Si-p/Si-n and a reference diode with a p–n junction at room temperature are analyzed and compared with data on the thickness of porous silicon layers and photoluminescence spectra for the synthesized heterostructures. It is shown that photospectral sensitivity in the region of 400–800 nm is exhibited by diodes with a single-layer structure of porous silicon whose thickness does not exceed 2 µm. In this case, the amplitude of the spectral photoresponse decreases with a decrease in the thickness of the porous layer. As for diodes with a two-layer structure of porous silicon (ordinary porous and tree-like porous) and thicknesses from 4.5 µm to 17.4 µm, currents do not flow due to rapid oxidation of such structures. A band energy diagram of a double heterodiode with a layer of porous silicon is proposed based on the experimental data.https://physmath.spbstu.ru/article/2022.58.24/siliconbuilt-in p–n junctionilluminationporous layer thicknesstree-like porous structuredouble heterodiodecurrent blockingphotoresponse spectradiode band diagram |
| spellingShingle | Yan Dmitriy Galkin Nikolay Galkin Konstantin Chernev Igor Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness St. Petersburg Polytechnical University Journal: Physics and Mathematics silicon built-in p–n junction illumination porous layer thickness tree-like porous structure double heterodiode current blocking photoresponse spectra diode band diagram |
| title | Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness |
| title_full | Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness |
| title_fullStr | Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness |
| title_full_unstemmed | Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness |
| title_short | Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness |
| title_sort | сurrent voltage characteristics and photoelectric properties of por si si p si n diodes with different porous layer thickness |
| topic | silicon built-in p–n junction illumination porous layer thickness tree-like porous structure double heterodiode current blocking photoresponse spectra diode band diagram |
| url | https://physmath.spbstu.ru/article/2022.58.24/ |
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