Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
In this work, the current-voltage and photoelectric spectral characteristics of double heterodiodes por-Si/Si-p/Si-n and a reference diode with a p–n junction at room temperature are analyzed and compared with data on the thickness of porous silicon layers and photoluminescence spectra for the synth...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Peter the Great St.Petersburg Polytechnic University
2022-10-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2022.58.24/ |