OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers
We developed an organic light-emitting diode (OLED)/oxide semiconductor (OS)/silicon (Si) display in which Si CMOS display drivers can be arranged two-dimensionally by monolithically stacking <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10439975/ |
| _version_ | 1827325694520066048 |
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| author | Munehiro Kozuma Yusuke Komura Shoki Miyata Yuki Okamoto Yuki Tamatsukuri Hiroki Inoue Toshihiko Saito Hidetomo Kobayashi Tatsuya Onuki Yuichi Yanagisawa Toshihiko Takeuchi Yutaka Okazaki Hitoshi Kunitake Daiki Nakamura Takaaki Nagata Yasumasa Yamane Makoto Ikeda Shunpei Yamazaki |
| author_facet | Munehiro Kozuma Yusuke Komura Shoki Miyata Yuki Okamoto Yuki Tamatsukuri Hiroki Inoue Toshihiko Saito Hidetomo Kobayashi Tatsuya Onuki Yuichi Yanagisawa Toshihiko Takeuchi Yutaka Okazaki Hitoshi Kunitake Daiki Nakamura Takaaki Nagata Yasumasa Yamane Makoto Ikeda Shunpei Yamazaki |
| author_sort | Munehiro Kozuma |
| collection | DOAJ |
| description | We developed an organic light-emitting diode (OLED)/oxide semiconductor (OS)/silicon (Si) display in which Si CMOS display drivers can be arranged two-dimensionally by monolithically stacking <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis-aligned crystalline oxide semiconductor (CAAC-OS) FETs over Si CMOS. A CAAC-OS FET exhibits a higher withstand voltage than a SiFET of the same size, enabling considerable pixel area reduction. The CAAC-OS FET can be driven even at a low refresh rate owing to its extremely low off-state current, making it an ideal choice for constructing pixel circuits. This integration of CAAC-OS FETs empowers our display system to offer enhanced resolution and reduced power consumption. The two-dimensionally arranged drivers have two features. (1) Si drivers can be arranged in two-dimensional driver blocks with a desired size, which provides flexibility to increase the number of driver stages and adjust resolution and frame rates for each driver block via logic processing. (2) The circuit performance of the system can be changed to prioritize frame rate and power consumption, which have a trade-off relation, of the driver by providing a redundant circuit in the driver. To demonstrate these features, we fabricated a prototype display and confirmed that our driver had a power consumption of 1,094.96 mW at 30 Gbps in a normal mode and 524.55 mW at 3.75 Gbps in a foveated rendering (FR) mode, revealing a 52% reduction in power consumption in the FR mode. This technology is expected to achieve high-frame-rate performance, which has been difficult to achieve in conventional microdisplays. |
| first_indexed | 2024-03-07T14:33:00Z |
| format | Article |
| id | doaj.art-7301f291d1704b3fb5931c96fe984c7b |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-07T14:33:00Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-7301f291d1704b3fb5931c96fe984c7b2024-03-06T00:00:20ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011218719410.1109/JEDS.2024.336693810439975OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display DriversMunehiro Kozuma0https://orcid.org/0009-0002-3835-2899Yusuke Komura1Shoki Miyata2Yuki Okamoto3https://orcid.org/0000-0002-8879-2094Yuki Tamatsukuri4Hiroki Inoue5Toshihiko Saito6Hidetomo Kobayashi7Tatsuya Onuki8https://orcid.org/0000-0002-8874-8165Yuichi Yanagisawa9https://orcid.org/0000-0002-8464-9549Toshihiko Takeuchi10Yutaka Okazaki11Hitoshi Kunitake12https://orcid.org/0000-0003-1187-4590Daiki Nakamura13Takaaki Nagata14Yasumasa Yamane15https://orcid.org/0009-0008-3519-6687Makoto Ikeda16Shunpei Yamazaki17https://orcid.org/0000-0001-6055-8987CAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanCAD Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanNOS Development Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanEquipment Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanEquipment Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanOEL Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanOEL Division, Semiconductor Energy Laboratory Company Ltd., Atsugi, JapanSystems Design Lab, School of Engineering, The University of Tokyo, Tokyo, JapanSemiconductor Energy Laboratory Company Ltd., Atsugi, JapanWe developed an organic light-emitting diode (OLED)/oxide semiconductor (OS)/silicon (Si) display in which Si CMOS display drivers can be arranged two-dimensionally by monolithically stacking <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-axis-aligned crystalline oxide semiconductor (CAAC-OS) FETs over Si CMOS. A CAAC-OS FET exhibits a higher withstand voltage than a SiFET of the same size, enabling considerable pixel area reduction. The CAAC-OS FET can be driven even at a low refresh rate owing to its extremely low off-state current, making it an ideal choice for constructing pixel circuits. This integration of CAAC-OS FETs empowers our display system to offer enhanced resolution and reduced power consumption. The two-dimensionally arranged drivers have two features. (1) Si drivers can be arranged in two-dimensional driver blocks with a desired size, which provides flexibility to increase the number of driver stages and adjust resolution and frame rates for each driver block via logic processing. (2) The circuit performance of the system can be changed to prioritize frame rate and power consumption, which have a trade-off relation, of the driver by providing a redundant circuit in the driver. To demonstrate these features, we fabricated a prototype display and confirmed that our driver had a power consumption of 1,094.96 mW at 30 Gbps in a normal mode and 524.55 mW at 3.75 Gbps in a foveated rendering (FR) mode, revealing a 52% reduction in power consumption in the FR mode. This technology is expected to achieve high-frame-rate performance, which has been difficult to achieve in conventional microdisplays.https://ieeexplore.ieee.org/document/10439975/CAAC-OSSi CMOSdrivermicrodisplayhigh frame rateand foveated rendering |
| spellingShingle | Munehiro Kozuma Yusuke Komura Shoki Miyata Yuki Okamoto Yuki Tamatsukuri Hiroki Inoue Toshihiko Saito Hidetomo Kobayashi Tatsuya Onuki Yuichi Yanagisawa Toshihiko Takeuchi Yutaka Okazaki Hitoshi Kunitake Daiki Nakamura Takaaki Nagata Yasumasa Yamane Makoto Ikeda Shunpei Yamazaki OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers IEEE Journal of the Electron Devices Society CAAC-OS Si CMOS driver microdisplay high frame rate and foveated rendering |
| title | OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers |
| title_full | OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers |
| title_fullStr | OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers |
| title_full_unstemmed | OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers |
| title_short | OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers |
| title_sort | oled microdisplay with monolithically integrated caac os fet and si cmos achieved by two dimensionally arranged silicon display drivers |
| topic | CAAC-OS Si CMOS driver microdisplay high frame rate and foveated rendering |
| url | https://ieeexplore.ieee.org/document/10439975/ |
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