| Summary: | In the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>L</mi><mi>a</mi><mi>m</mi><mi>b</mi><mi>e</mi><mi>r</mi><mi>t</mi><mi>W</mi></mrow></semantics></math></inline-formula> function, is used to extract the physical parameters of organic and inorganic Schottky barrier diodes (SBDs). The extraction is achieved by a variety of methods using the experimental I–V characteristics. The organic SBD is based on a Poly (3-hexylthiophene-2,5-diyle) conjugated polymer (P3HT) with Al contact, measured at 300 K. Regarding the inorganic SBDs, one is based on Iridium–Silicon Carbide (Ir–SiC), measured at 300 K, and the second diode is based on Gold–Gallium Arsenide (Au–GaAs), measured at 200 K. The numerical characteristics based on the physical parameters extracted by the presented methods are in good agreement with the experimental data. The determination coefficient of the modeling methods for the three SBDs is higher than 99.99%.
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