LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics
In the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>L</mi><mi>...
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MDPI AG
2022-02-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/15/5/1667 |
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| author | Safae Aazou Matthew Schuette White Martin Kaltenbrunner Zouheir Sekkat Daniel Ayuk Mbi Egbe El Mahdi Assaid |
| author_facet | Safae Aazou Matthew Schuette White Martin Kaltenbrunner Zouheir Sekkat Daniel Ayuk Mbi Egbe El Mahdi Assaid |
| author_sort | Safae Aazou |
| collection | DOAJ |
| description | In the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>L</mi><mi>a</mi><mi>m</mi><mi>b</mi><mi>e</mi><mi>r</mi><mi>t</mi><mi>W</mi></mrow></semantics></math></inline-formula> function, is used to extract the physical parameters of organic and inorganic Schottky barrier diodes (SBDs). The extraction is achieved by a variety of methods using the experimental I–V characteristics. The organic SBD is based on a Poly (3-hexylthiophene-2,5-diyle) conjugated polymer (P3HT) with Al contact, measured at 300 K. Regarding the inorganic SBDs, one is based on Iridium–Silicon Carbide (Ir–SiC), measured at 300 K, and the second diode is based on Gold–Gallium Arsenide (Au–GaAs), measured at 200 K. The numerical characteristics based on the physical parameters extracted by the presented methods are in good agreement with the experimental data. The determination coefficient of the modeling methods for the three SBDs is higher than 99.99%. |
| first_indexed | 2024-03-09T20:41:53Z |
| format | Article |
| id | doaj.art-73170c09e4f847cb86e00393f3ff2bca |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-09T20:41:53Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-73170c09e4f847cb86e00393f3ff2bca2023-11-23T22:55:43ZengMDPI AGEnergies1996-10732022-02-01155166710.3390/en15051667LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V CharacteristicsSafae Aazou0Matthew Schuette White1Martin Kaltenbrunner2Zouheir Sekkat3Daniel Ayuk Mbi Egbe4El Mahdi Assaid5Faculty of Sciences, Mohammed V University in Rabat, B.P. 1014 RP Rabat, MoroccoDepartment of Physics, University of Vermont, Burlington, VT 05405, USASoft Matter Physics, Institute of Experimental Physics, Johannes Kepler University, A-4040 Linz, AustriaFaculty of Sciences, Mohammed V University in Rabat, B.P. 1014 RP Rabat, MoroccoEnergieinstitut an der Johannes Kepler Universität, Altenbergerstraße 69, 4040 Linz, AustriaFaculty of Sciences, University Chouaïb Doukkali, B.P. 24000 El Jadida, MoroccoIn the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>L</mi><mi>a</mi><mi>m</mi><mi>b</mi><mi>e</mi><mi>r</mi><mi>t</mi><mi>W</mi></mrow></semantics></math></inline-formula> function, is used to extract the physical parameters of organic and inorganic Schottky barrier diodes (SBDs). The extraction is achieved by a variety of methods using the experimental I–V characteristics. The organic SBD is based on a Poly (3-hexylthiophene-2,5-diyle) conjugated polymer (P3HT) with Al contact, measured at 300 K. Regarding the inorganic SBDs, one is based on Iridium–Silicon Carbide (Ir–SiC), measured at 300 K, and the second diode is based on Gold–Gallium Arsenide (Au–GaAs), measured at 200 K. The numerical characteristics based on the physical parameters extracted by the presented methods are in good agreement with the experimental data. The determination coefficient of the modeling methods for the three SBDs is higher than 99.99%.https://www.mdpi.com/1996-1073/15/5/1667Schottky barrier diodemodelingone diodephysical parametersOrtiz–Conde methodFindFit |
| spellingShingle | Safae Aazou Matthew Schuette White Martin Kaltenbrunner Zouheir Sekkat Daniel Ayuk Mbi Egbe El Mahdi Assaid LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics Energies Schottky barrier diode modeling one diode physical parameters Ortiz–Conde method FindFit |
| title | LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics |
| title_full | LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics |
| title_fullStr | LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics |
| title_full_unstemmed | LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics |
| title_short | LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics |
| title_sort | lambertw function to extract physical parameters of a schottky barrier diode from its i v characteristics |
| topic | Schottky barrier diode modeling one diode physical parameters Ortiz–Conde method FindFit |
| url | https://www.mdpi.com/1996-1073/15/5/1667 |
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