Investigation of <italic>&#x03C7;</italic><sup>(2)</sup>-Translated Optical Frequency Combs Tunability in Gallium Phosphide-on- Insulator Resonators

We describe a synergistic optimization approach that enables highly efficient frequency translation of a Kerr optical frequency comb (OFC) from 1550 nm to 775 nm in a gallium phosphide-on-insulator (GaP-OI) microresonator. Key distinctions from previous GaP-OI works which focused on individual optic...

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Bibliographic Details
Main Authors: Pengzhuo Wu, Weiren Cheng, Ning Ding, Xingyu Tang, Zhaoting Geng, Zhenyu Liu, Mingjian You, Xiaolun Yu, Yi Li, Qiancheng Zhao
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
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Online Access:https://ieeexplore.ieee.org/document/10433639/
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Summary:We describe a synergistic optimization approach that enables highly efficient frequency translation of a Kerr optical frequency comb (OFC) from 1550 nm to 775 nm in a gallium phosphide-on-insulator (GaP-OI) microresonator. Key distinctions from previous GaP-OI works which focused on individual optical nonlinearity are that this work not only emphasizes the interaction between the second- and third-order nonlinearity, but also explores the tunability of the <italic>&#x03C7;</italic><sup>(2)</sup>-translated OFC through geometric and temperature tuning. We apply this approach to the burgeoning GaP-OI platform and demonstrate that a 50 &#x03BC;m-radius ring resonator with a cross-section of 555 nm &#x00D7; 600 nm has an intracavity second harmonic (SH) generation efficiency as high as 71.5&#x0025;&#x002F;W, 3 times larger compared to the state-of-the-art designs. The sum-frequency (SF) comb at 775 nm has a geometric tuning sensitivity of 354 GHz&#x002F;nm, and a thermal tuning sensitivity of 24.8 GHz&#x002F;K, paving the way for post-fabrication trimming and in-situ spectral shaping, with a broader potential to realize highly efficient, wide-spectrum, and tunable on-chip nonlinear sources.
ISSN:1943-0655