Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation
A simple fabrication method for the surface modification of an electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO2) layer using a thermal oxidation process. The process aims not onl...
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| Format: | Article |
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MDPI AG
2018-05-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/9/5/222 |
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| author | Tuan Norjihan Tuan Yaakub Jumril Yunas Rhonira Latif Azrul Azlan Hamzah Mohd Farhanulhakim Mohd Razip Wee Burhanuddin Yeop Majlis |
| author_facet | Tuan Norjihan Tuan Yaakub Jumril Yunas Rhonira Latif Azrul Azlan Hamzah Mohd Farhanulhakim Mohd Razip Wee Burhanuddin Yeop Majlis |
| author_sort | Tuan Norjihan Tuan Yaakub |
| collection | DOAJ |
| description | A simple fabrication method for the surface modification of an electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO2) layer using a thermal oxidation process. The process aims not only to improve the surface quality of the channel to be suitable for electroosmotic fluid transport but also to reduce the channel width using a simple technique. Initially, the parallel microchannel array with dimensions of 0.5 mm length and a width ranging from 1.8 µm to 2 µm are created using plasma etching on the 2 cm × 2 cm silicon substrate <100>. The oxidation of the silicon channel in a thermal chamber is then conducted to create the SiO2 layer. The layer properties and the quality of the surface are analyzed using scanning electron microscopy (SEM) and a surface profiler, respectively. The results show that the maximum oxidation growth rate occurs in the first 4 h of oxidation time and the rate decreases over time as the oxide layer becomes thicker. It is also found that the surface roughness is reduced with the increase of the process temperature and the oxide thickness. The scallop effect on the vertical wall due to the plasma etching process also improved with the presence of the oxide layer. After oxidation, the channel width is reduced by ~40%. The demonstrated method is suggested for the fabrication of a uniform channel cross section with high aspect ratio in sub-micro and nanometer scale that will be useful for the electroosmotic (EO) ion manipulation of the biomedical fluid sample. |
| first_indexed | 2024-12-10T06:42:35Z |
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| id | doaj.art-7335647660bb43af970e4be72e6a9dbe |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-10T06:42:35Z |
| publishDate | 2018-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-7335647660bb43af970e4be72e6a9dbe2022-12-22T01:58:45ZengMDPI AGMicromachines2072-666X2018-05-019522210.3390/mi9050222mi9050222Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry OxidationTuan Norjihan Tuan Yaakub0Jumril Yunas1Rhonira Latif2Azrul Azlan Hamzah3Mohd Farhanulhakim Mohd Razip Wee4Burhanuddin Yeop Majlis5Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, MalaysiaA simple fabrication method for the surface modification of an electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO2) layer using a thermal oxidation process. The process aims not only to improve the surface quality of the channel to be suitable for electroosmotic fluid transport but also to reduce the channel width using a simple technique. Initially, the parallel microchannel array with dimensions of 0.5 mm length and a width ranging from 1.8 µm to 2 µm are created using plasma etching on the 2 cm × 2 cm silicon substrate <100>. The oxidation of the silicon channel in a thermal chamber is then conducted to create the SiO2 layer. The layer properties and the quality of the surface are analyzed using scanning electron microscopy (SEM) and a surface profiler, respectively. The results show that the maximum oxidation growth rate occurs in the first 4 h of oxidation time and the rate decreases over time as the oxide layer becomes thicker. It is also found that the surface roughness is reduced with the increase of the process temperature and the oxide thickness. The scallop effect on the vertical wall due to the plasma etching process also improved with the presence of the oxide layer. After oxidation, the channel width is reduced by ~40%. The demonstrated method is suggested for the fabrication of a uniform channel cross section with high aspect ratio in sub-micro and nanometer scale that will be useful for the electroosmotic (EO) ion manipulation of the biomedical fluid sample.http://www.mdpi.com/2072-666X/9/5/222surface modificationelectroosmotic flowmicrofluidicsilicon nanochannelthermal oxidation |
| spellingShingle | Tuan Norjihan Tuan Yaakub Jumril Yunas Rhonira Latif Azrul Azlan Hamzah Mohd Farhanulhakim Mohd Razip Wee Burhanuddin Yeop Majlis Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation Micromachines surface modification electroosmotic flow microfluidic silicon nanochannel thermal oxidation |
| title | Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation |
| title_full | Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation |
| title_fullStr | Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation |
| title_full_unstemmed | Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation |
| title_short | Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation |
| title_sort | surface modification of electroosmotic silicon microchannel using thermal dry oxidation |
| topic | surface modification electroosmotic flow microfluidic silicon nanochannel thermal oxidation |
| url | http://www.mdpi.com/2072-666X/9/5/222 |
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