Epitaxial deposition of LaF3 thin films on Si using deep eutectic solvent based facile and green chemical route
Epitaxial lanthanum fluoride (LaF3) is considered an important and outstanding material for the fabrication of Metal–Insulator–Semiconductor (MIS) capacitive devices. In the quest of finding a green and low-cost scalable technique for the epitaxial deposition of LaF3 thin-film, this article presents...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0039733 |