Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD

Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD

Abstract. We have studied the effect of hydrogen plasma on GaN film, grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). GaN films grown on a sapphire (0001) without the buffer layer have a polycrystalline structure. While films grown using the buffer layer tends to have a sing...

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Bibliographic Details
Main Authors: Sugianto Sugianto, A. Subagio, Erzam Erzam, R.A. Sani, M. Budiman, P. Arifin, M. Barmawi
Format: Article
Language:English
Published: ITB Journal Publisher 2019-01-01
Series:Journal of Mathematical and Fundamental Sciences
Subjects:
GaN
plasma-assisted MOCVD
buffer layer
hydrogen plasma
single orientation
MOCVD berbantuan plasma
Online Access:https://journals.itb.ac.id/index.php/jmfs/article/view/9238

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