Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices

Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices

The use of strained substrates may overcome indium incorporation limits without inducing plastic relaxation in InGaN quantum wells, and this is particularly important for short-period InGaN/GaN superlattices. By incorporating elastic strain into these heterostructures, their optoelectronic behavior...

Full description

Bibliographic Details
Main Authors: Polyxeni Chatzopoulou, Isaak G. Vasileiadis, Philomela Komninou, Vassilis Pontikis, Theodoros Karakostas, George P. Dimitrakopulos
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Crystals
Subjects:
InGaN
quantum wells
strain
band gap
DFT
III-nitrides
Online Access:https://www.mdpi.com/2073-4352/13/4/700

Similar Items

Similar Items