First-Principles Study of the Contact Resistance at 2D Metal/2D Semiconductor Heterojunctions

First-Principles Study of the Contact Resistance at 2D Metal/2D Semiconductor Heterojunctions

The high contact resistance at metal/two-dimensional (2D) semiconductor junctions is a major issue for the integration of 2D materials in nanoelectronic devices. We review here recent theoretical results on the contact resistance at lateral heterojunctions between graphene or 1T-MoS<sub>2</...

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Bibliographic Details
Main Authors: Michel Houssa, Ruishen Meng, Valery Afanas’ev, André Stesmans
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Applied Sciences
Subjects:
2D materials
density functional theory
non-equilibrium Green’s function method
electronic transport simulations
contact resistance
Online Access:https://www.mdpi.com/2076-3417/10/8/2731

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