Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders....
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MDPI AG
2021-08-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/16/4623 |
| _version_ | 1797523062454747136 |
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| author | Jiawei Wang Aitian Chen Peisen Li Sen Zhang |
| author_facet | Jiawei Wang Aitian Chen Peisen Li Sen Zhang |
| author_sort | Jiawei Wang |
| collection | DOAJ |
| description | Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>)<sub>1−x</sub>-(PbTiO<sub>3</sub>)<sub>x</sub>] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics. |
| first_indexed | 2024-03-10T08:38:07Z |
| format | Article |
| id | doaj.art-73de1c9f89fe4067806c625a93969760 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T08:38:07Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-73de1c9f89fe4067806c625a939697602023-11-22T08:30:18ZengMDPI AGMaterials1996-19442021-08-011416462310.3390/ma14164623Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic HeterostructureJiawei Wang0Aitian Chen1Peisen Li2Sen Zhang3College of Science, Zhejiang University of Technology, Hangzhou 310023, ChinaPhysical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi ArabiaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, ChinaCollege of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, ChinaElectric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>)<sub>1−x</sub>-(PbTiO<sub>3</sub>)<sub>x</sub>] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.https://www.mdpi.com/1996-1944/14/16/4623FM/FE multiferroic heterostructurestraintronicsvolatile and nonvolatileMTJmagnetoelectric memory |
| spellingShingle | Jiawei Wang Aitian Chen Peisen Li Sen Zhang Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure Materials FM/FE multiferroic heterostructure straintronics volatile and nonvolatile MTJ magnetoelectric memory |
| title | Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure |
| title_full | Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure |
| title_fullStr | Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure |
| title_full_unstemmed | Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure |
| title_short | Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure |
| title_sort | magnetoelectric memory based on ferromagnetic ferroelectric multiferroic heterostructure |
| topic | FM/FE multiferroic heterostructure straintronics volatile and nonvolatile MTJ magnetoelectric memory |
| url | https://www.mdpi.com/1996-1944/14/16/4623 |
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