Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures
Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the numbe...
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| author | Alexander V. Bulgakov Jiří Beránek Vladimir A. Volodin Yuzhu Cheng Yoann Levy Siva S. Nagisetty Martin Zukerstein Alexander A. Popov Nadezhda M. Bulgakova |
| author_facet | Alexander V. Bulgakov Jiří Beránek Vladimir A. Volodin Yuzhu Cheng Yoann Levy Siva S. Nagisetty Martin Zukerstein Alexander A. Popov Nadezhda M. Bulgakova |
| author_sort | Alexander V. Bulgakov |
| collection | DOAJ |
| description | Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization. Similar crystallization regimes were observed for both single-shot and multi-shot conditions, although at lower fluences and with a lower selectivity in the latter case. A theoretical analysis was carried out based on the laser energy absorption mechanisms, thermal stresses, and non-thermal effects. |
| first_indexed | 2024-03-11T04:13:14Z |
| format | Article |
| id | doaj.art-740d1f37d32a46209ee0df29d7886ee8 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T04:13:14Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-740d1f37d32a46209ee0df29d7886ee82023-11-17T23:17:57ZengMDPI AGMaterials1996-19442023-05-01169357210.3390/ma16093572Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer StructuresAlexander V. Bulgakov0Jiří Beránek1Vladimir A. Volodin2Yuzhu Cheng3Yoann Levy4Siva S. Nagisetty5Martin Zukerstein6Alexander A. Popov7Nadezhda M. Bulgakova8HiLASE Centre, Institute of Physics, Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech RepublicHiLASE Centre, Institute of Physics, Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech RepublicRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk 630090, RussiaPhysics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, RussiaHiLASE Centre, Institute of Physics, Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech RepublicCoherent LaserSystems GmbH & Co. KG, Hans Boeckler Str. 12, 37079 Göttingen, GermanyHiLASE Centre, Institute of Physics, Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech RepublicInstitute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl 150007, RussiaHiLASE Centre, Institute of Physics, Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech RepublicSilicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization. Similar crystallization regimes were observed for both single-shot and multi-shot conditions, although at lower fluences and with a lower selectivity in the latter case. A theoretical analysis was carried out based on the laser energy absorption mechanisms, thermal stresses, and non-thermal effects.https://www.mdpi.com/1996-1944/16/9/3572silicon–germanium multilayer structuresthin filmsultrashort infrared laser annealingselective crystallizationdefect accumulationRaman spectroscopy |
| spellingShingle | Alexander V. Bulgakov Jiří Beránek Vladimir A. Volodin Yuzhu Cheng Yoann Levy Siva S. Nagisetty Martin Zukerstein Alexander A. Popov Nadezhda M. Bulgakova Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures Materials silicon–germanium multilayer structures thin films ultrashort infrared laser annealing selective crystallization defect accumulation Raman spectroscopy |
| title | Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures |
| title_full | Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures |
| title_fullStr | Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures |
| title_full_unstemmed | Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures |
| title_short | Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures |
| title_sort | ultrafast infrared laser crystallization of amorphous si ge multilayer structures |
| topic | silicon–germanium multilayer structures thin films ultrashort infrared laser annealing selective crystallization defect accumulation Raman spectroscopy |
| url | https://www.mdpi.com/1996-1944/16/9/3572 |
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