Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the numbe...

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Bibliographic Details
Main Authors: Alexander V. Bulgakov, Jiří Beránek, Vladimir A. Volodin, Yuzhu Cheng, Yoann Levy, Siva S. Nagisetty, Martin Zukerstein, Alexander A. Popov, Nadezhda M. Bulgakova
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Materials
Subjects:
silicon–germanium multilayer structures
thin films
ultrashort infrared laser annealing
selective crystallization
defect accumulation
Raman spectroscopy
Online Access:https://www.mdpi.com/1996-1944/16/9/3572

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https://www.mdpi.com/1996-1944/16/9/3572

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