Multilayer ion trap technology for scalable quantum computing and quantum simulation
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2019-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/ab0e46 |
| _version_ | 1797750147232301056 |
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| author | A Bautista-Salvador G Zarantonello H Hahn A Preciado-Grijalva J Morgner M Wahnschaffe C Ospelkaus |
| author_facet | A Bautista-Salvador G Zarantonello H Hahn A Preciado-Grijalva J Morgner M Wahnschaffe C Ospelkaus |
| author_sort | A Bautista-Salvador |
| collection | DOAJ |
| description | We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled ^9 Be ^+ ion held at a distance of 35 $\mu {\rm{m}}$ above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation. |
| first_indexed | 2024-03-12T16:28:30Z |
| format | Article |
| id | doaj.art-7435053dc3f84d4e87d16c71ea19abd8 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:28:30Z |
| publishDate | 2019-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-7435053dc3f84d4e87d16c71ea19abd82023-08-08T15:36:39ZengIOP PublishingNew Journal of Physics1367-26302019-01-0121404301110.1088/1367-2630/ab0e46Multilayer ion trap technology for scalable quantum computing and quantum simulationA Bautista-Salvador0G Zarantonello1H Hahn2A Preciado-Grijalva3J Morgner4M Wahnschaffe5C Ospelkaus6https://orcid.org/0000-0002-4170-2936Physikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, Germany; Institute of Quantum Optics, Leibniz Universität Hannover , Welfengarten 1, D-30167, Hannover, Germany; Laboratory for Nano- and Quantum Engineering, Leibniz Universität Hannover , Schneiderberg 39, D-30167, Hannover, GermanyPhysikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, Germany; Institute of Quantum Optics, Leibniz Universität Hannover , Welfengarten 1, D-30167, Hannover, GermanyPhysikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, Germany; Institute of Quantum Optics, Leibniz Universität Hannover , Welfengarten 1, D-30167, Hannover, GermanyPhysikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, GermanyPhysikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, Germany; Institute of Quantum Optics, Leibniz Universität Hannover , Welfengarten 1, D-30167, Hannover, GermanyPhysikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, Germany; Institute of Quantum Optics, Leibniz Universität Hannover , Welfengarten 1, D-30167, Hannover, Germany; Laboratory for Nano- and Quantum Engineering, Leibniz Universität Hannover , Schneiderberg 39, D-30167, Hannover, GermanyPhysikalisch-Technische Bundesanstalt , Bundesallee 100, D-38116, Braunschweig, Germany; Institute of Quantum Optics, Leibniz Universität Hannover , Welfengarten 1, D-30167, Hannover, Germany; Laboratory for Nano- and Quantum Engineering, Leibniz Universität Hannover , Schneiderberg 39, D-30167, Hannover, GermanyWe present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled ^9 Be ^+ ion held at a distance of 35 $\mu {\rm{m}}$ above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.https://doi.org/10.1088/1367-2630/ab0e46surface-electrode ion trapatom chipmicrofabricationquantum logic and simulation |
| spellingShingle | A Bautista-Salvador G Zarantonello H Hahn A Preciado-Grijalva J Morgner M Wahnschaffe C Ospelkaus Multilayer ion trap technology for scalable quantum computing and quantum simulation New Journal of Physics surface-electrode ion trap atom chip microfabrication quantum logic and simulation |
| title | Multilayer ion trap technology for scalable quantum computing and quantum simulation |
| title_full | Multilayer ion trap technology for scalable quantum computing and quantum simulation |
| title_fullStr | Multilayer ion trap technology for scalable quantum computing and quantum simulation |
| title_full_unstemmed | Multilayer ion trap technology for scalable quantum computing and quantum simulation |
| title_short | Multilayer ion trap technology for scalable quantum computing and quantum simulation |
| title_sort | multilayer ion trap technology for scalable quantum computing and quantum simulation |
| topic | surface-electrode ion trap atom chip microfabrication quantum logic and simulation |
| url | https://doi.org/10.1088/1367-2630/ab0e46 |
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